Optical characterization of isoelectronic ZnSe(1-x)O(x) semiconductors

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Title:	Optical characterization of isoelectronic ZnSe(1-x)O(x) semiconductors
Authors:	Lin,YC;Chung,HL;Ku,JT;Chen,CY;Chien,KF;Fan,WC;Lee,L;Chyi,JI;Chou,WC;Chang,WH;Chen,WK
Contributors:	電機工程學系
Keywords:	ALLOYS
Date:	2011
Issue Date:	2012-03-28 10:15:11 (UTC+8)
Publisher:	國立中央大學
Abstract:	We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe(1-x)O(x) (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe(1-x)O(x) decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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