HF/H(2)O(2) Etching for Removal of Damage Layer on As-Transferred Si Layer Formed by Ion-Cut Process

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52762

Title:	HF/H(2)O(2) Etching for Removal of Damage Layer on As-Transferred Si Layer Formed by Ion-Cut Process
Authors:	Ho,CC;Huang,CH;Chen,BS;Su,YH;Chen,KJ;Hsu,CS;Lee,TH
Contributors:	物理學系
Date:	2010
Issue Date:	2012-06-11 10:43:06 (UTC+8)
Publisher:	國立中央大學
Abstract:	When a 100 nm thick Si layer was transferred onto a bare Si wafer by the hydrogen-induced-layer-transfer process, a spongy damage layer with microvoids was formed on the transferred layer because of hydrogen blistering. The surface-to-volume ratio of the damage layer was greater than that of the layer where blistering did not occur. Therefore, the damage layer was selectively etched by an HF/H(2)O(2) mixture and completely removed (the etching rates of Si at 70 degrees C for the bulk layer and damage layer were 0.45 and 13.8 nm/min, respectively). Consequently, a smooth, damage-free Si layer (root-mean-square roughness = 2.74 nm) was obtained. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3397476] All rights reserved.
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Appears in Collections:	[Department of Physics] journal & Dissertation

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