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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52772


    Title: Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns
    Authors: Woon,WY;Chen,CL
    Contributors: 物理學系
    Keywords: MOSFETS;STRESS;SI
    Date: 2010
    Issue Date: 2012-06-11 10:43:30 (UTC+8)
    Publisher: 國立中央大學
    Abstract: We investigate two-dimensional boron transient diffusion in sub-micron scale patterns by plane view scanning capacitance microscopy (SCM). Submicron long strips and squares ion implantation windows of systematically varying sizes have been designed and fabricated. Boron ion implantation and spike annealing were followed to activate the dopant and cause diffusion. Square opening windows show more enhanced diffusion than the long strip counterparts, especially at larger length scales. We explain the observation and fit the experimental data by a nonlinear logistics model. The implication to modern microelectronic circuit design and conventional dopant profiling methodology are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492840]
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[物理學系] 期刊論文

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