Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52847

Title:	Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth
Authors:	Woon,WY;Wang,SH;Chuang,YT;Chuang,MC;Chen,CL
Contributors:	物理學系
Keywords:	CARBON INCORPORATION;AMORPHOUS SI;IMPLANTATION;SI1-YCY;LAYERS
Date:	2010
Issue Date:	2012-06-11 10:47:02 (UTC+8)
Publisher:	國立中央大學
Abstract:	We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped Si: C by time resolved reflectivity and high resolution x-ray diffraction. The effect of SPER kinetics on strain profile and dopant activation is analyzed. The accumulated tensile strain induced by both C and P during SPER synergistically determines the onset of SPER rate retardation and leads to lower strain and electrical conductance near surface. Physical origin for the observed SPER rate evolution is discussed and explained with a strain included solute trapping model. Possibility of tailoring strain and doping profiles is discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3497195]
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Physics] journal & Dissertation

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