Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

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题名:	Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers
作者:	Sheu,JK;Tu,SJ;Lee,ML;Yeh,YH;Yang,CC;Huang,FW;Lai,WC;Chen,CW;Chi,GC
贡献者:	物理學系
关键词:	ION-IMPLANTATION
日期:	2011
上传时间:	2012-06-11 10:48:47 (UTC+8)
出版者:	國立中央大學
摘要:	GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[物理學系] 期刊論文

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