本論文利用化學浴沉積法將β-In2S3光電極薄膜沉積於導電玻璃上，並將其應用作為光電化學產氫系統中的光電極；化學浴沉積法具設備簡單、製程便宜、可大面積生產等優點，為高經濟效益的化學製程；β-In2S3為低毒性且可吸收紫外光與部分可見光波段，因此極具發展潛力。本研究改變添加硝酸量、鍍層層數與磁石轉速、燒結溫度、陽陰離子莫耳數比例、油浴溫度，用以探討薄膜結晶性、表面型態、光學及光電化學性質。所製備之β-In2S3薄膜在陽陰離子莫耳數比例為一比七、硝酸量為3.5ml、鍍層層數四層、燒結溫度400℃、油浴溫度80℃有較高的光電流效益，直接能隙值為2.1 eV。利用100 mW/cm2(AM 1.5G)的模擬太陽光照射，無施加偏壓時其光電流值為5.59 mA/cm2，施加偏壓0.5V時其光電流值為12 mA/cm2。較文獻上其他相同製程的硫化物薄膜，有較高的光電流效益。In this study, chemical bath deposition (CBD) is applied to deposit β-In2S3 thin film on indium tin oxide coated glass (ITO), which can be used as the photoelectrode in photoelectrochemical production of hydrogen. The advantages of chemical bath deposition method are simple equipment, inexpensive and large area deposition. β-In2S3 can absorb ultraviolet and part of visible light, and has an extremely low toxicity so that it has large potential as the photoelectrode thin film. In our experiment, we investigate the crystal structure , morphology, optic property, and PEC performance under various working parameters, such as amount of nitric acid , number of thin film and stirring rate , thermal treatment temperature, cation and anion ratio, and bath temperature. The results show that the resulting β-In2S3 photoelectrode thin film has the direct band gap of 2.1 eV. With 100 mW/cm2(AM 1.5G) simulation sunlight as the light source, the photocurrent density of β-In2S3 photoelectrode thin film is 5.59 mA/cm2 at external voltage of 0 V(vs. Ag/AgCl), and 12 mA/cm2 at external voltage of 0.5 V(vs. Ag/AgCl), respectively. The photo-electric properties of the present thin film in better than that using the same process in literature before.
