氧化鋅摻雜3.5 at.% 鋁與0.00、0.59、1.35、2.36 at.% 鈦濺鍍薄膜之結構與特性分析研究;On the structure and characterization of sputtered ZnO thin films doped with 3.5 at.% Al and 0.00, 0.59, 1.35, 2.36 at.% Ti

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題名:	氧化鋅摻雜3.5 at.% 鋁與0.00、0.59、1.35、2.36 at.% 鈦濺鍍薄膜之結構與特性分析研究;On the structure and characterization of sputtered ZnO thin films doped with 3.5 at.% Al and 0.00, 0.59, 1.35, 2.36 at.% Ti
作者:	吳建男;Wu,Jian-Nan
貢獻者:	機械工程研究所
關鍵詞:	磁控濺鍍、鋁鈦共摻雜氧化鋅、透明導電薄膜、動態極化;Potentiodynamic polarization;Magnetron sputtering;TAZO thin film;Transparent Conductive Oxide
日期:	2012-07-20
上傳時間:	2012-09-11 18:17:21 (UTC+8)
出版者:	國立中央大學
摘要:	本論文以磁控濺鍍法製備透明導電氧化物薄膜，分別使用射頻(RF)功率濺射氧化鋅靶、純鋁靶而以直流(DC)功率濺射鈦靶來製備鈦鋁共摻雜氧化鋅透明導電薄膜，經濺鍍150分鐘，可獲得約700 nm厚度之薄膜。薄膜經能譜儀(EDS)分析可獲知其成份，薄膜內的金屬含量比重，使用XPS得知摻雜於氧化鋅系列薄膜中，鋁的峰值為73.7 eV，可得知為 Al2O3，其鋁摻雜後帶正三價電子。鈦的峰值為458.7 eV，可得知為 TiO2，其鈦摻雜後帶正四價電子。結構方面使用XRD分析可得知 AZO、TZO及TAZO透明導電薄膜都可改善未摻雜氧化鋅(Pure ZnO)(002)峰值強度及較差的晶粒尺寸，且由FE-SEM觀察也有相同的結果證實，其中以Ti0.59 at.% TAZO薄膜具有最大晶粒尺寸為43 nm。由AFM分析可了解摻雜鈦金屬後，可有效的降低Ra與Rmax的現象，達到較平滑表面的特性。觀察微結構可以發現摻雜鈦金屬後缺陷長度有增長的現象，可使得電子傳導路徑更為順暢。薄膜光電性質中以 Ti 0.59 at.% TAZO 薄膜具有最低 9.08×10-4Ω．cm電阻率及在可見光穿透度以94.3%為最佳。由電化學法分析薄膜耐酸鹼特性可發現隨鈦含量增加其腐蝕電流密度越小、抗蝕性增強的現象。The purpose of this study is to prepare transparent conductive oxide thin film were prepared on glass substrate by three-target magnetron sputtering system in this work. The glass substrate was heated to 200℃, and the working pressure in the chamber was at 5 × 10-2 Torr. In the process of sputtering, using the radio frequency (RF) power sputtering zinc oxide (ZnO) target, aluminum (Al) target, the direct current (DC) power sputtering titanium (Ti) target to the preparation of titanium aluminum codoped zinc oxide (TAZO) transparent conductive films by sputtering for 150 minutes, available about 700 nm thickness film. The surface morphology and cross section of the films were examined by using composition was analyzed energy dispersive spectroscopy (EDS), the proportion of the metal content of the film using X-ray photoelectron spectroscopy (XPS) learned doped zinc oxide film series, the aluminum peak of 73.7 eV, can be learned of Al2O3, with its aluminum doping positive trivalent electrons. Titanium peak at 458.7 eV, can be learned TiO2 titanium doped with positive tetravalent electrons. Structure using X-ray diffraction (XRD) analysis can be learned that the AZO, TZO and TAZO film can be improved Pure ZnO (002) peak intensity and poor grain size, and by field emission scanning electron microscope (FE-SEM) observation of the same results confirmed, in which to Ti 0.59 at.% TAZO film has a maximum grain size of 43 nm. Atomic force microscopy (AFM) analysis to understand the doping of titanium, which can effectively reduce the average roughness (Ra) and maximum roughness (Rmax) of the phenomenon, to achieve a more smooth surface features. Observe the microstructure can be doped titanium defect length growth of the phenomenon, can make the electron conduction path smoother. Thin film optical and electrical properties of Ti 0.59 at.% TAZO film has a minimum 9.08 × 10-4 Ωcm resistivity and in the visible light transmittance of 94.3% for the best. By the electrochemical method of thin film acid/alkali features can be found with the titanium content increases the corrosion current density is smaller, and enhanced corrosion resistance phenomenon.
顯示於類別:	[機械工程研究所] 博碩士論文

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