對苯醌合對苯二酚表面鈍化矽基太陽電池之研究;Study of surface passivation on silicon solar cell by quinhydrone

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題名:	對苯醌合對苯二酚表面鈍化矽基太陽電池之研究;Study of surface passivation on silicon solar cell by quinhydrone
作者:	黃偵晃;Huang,Jen-Huang
貢獻者:	光電科學研究所
關鍵詞:	有效生命週期;矽基太陽電池;表面鈍化;對苯醌合對苯二酚;表面復合速率;quinhydrone;surface recombination velocity;effective lifetime;silicon solar cell;surface passivation
日期:	2012-07-30
上傳時間:	2012-09-11 18:40:13 (UTC+8)
出版者:	國立中央大學
摘要:	本研究中，首先討論不同矽晶片如何影響表面鈍化與太陽電池元件之結果。接著使用對苯醌合對苯二酚(QHY)作為表面鈍化的材料，QHY 表面鈍化的優點為快速、方便、簡單以及效果良好之化學浸泡方法。最後我們將其應用於矽基太陽電池上用以提升開路電壓、填充因子以及轉換效率。我們對厚度 200 µm 之 30 片矽晶片作 effective lifetime 的量測，分別取好、中、壞三種晶片，以相同的製程方式將其製成太陽電池，而在轉換效率上各為 10.9 %、9.3 %以及 7.4 %。接下來，我們在不同 QHY 濃度與浸泡時間下以 QSSPCD 量測中等矽晶片的 effective lifetime，而在最佳條件為:QHY 濃度 0.01 mol/L，浸泡時間 60 分鐘下有最佳 effective lifetime 值為 788 µs，且表面復合速率為 13 cm/s。再以 XPS 分析其表面鍵結，經由 C1s、O1s、Si 2p 頻譜證實經 QHY 鈍化後矽晶片之表面以及表面底下 2 至 4 nm 存在有Si-O、C-C、C-O 鍵結訊號，表示經處理過的矽晶片其表面缺陷得以改善。經我們使用 QHY 表面鈍化後的矽薄膜，除改善其表面缺陷也進而提升其 effective lifetime，之後再鍍上 ITO 與電極來製備成矽基太陽電池。最後，在 AM1.5 光源量測下，經 QHY 表面鈍化後之太陽電池其開路電壓從 553.5 mV 增函至 570.7 mV、 FF 從 61.5 %增至 69.62 %，轉換效率則從 11.71 %增至 12.47 %。In this study, first of all, we discuss how different silicon wafer affect the results of surface passivation and solar cell; then we use the quinhydrone(QHY) as the surface passivation material. The advantages of QHY are rapid, convenient, easy and good passivation effect in chemical immersion. Finally, we apply surface passivation of QHY on silicon solar cells to enhance the open-circuit voltage, fill factor and conversion efficiency.We measure the effective lifetime value of 30 pieces of silicon wafers, and select respectively the good, normal and bad, three kinds of silicon wafers to process solar cells, whose conversion efficiency are 10.9%, 9.3% and 7.4%, respectively, under the same procedure. Next, we measure effective lifetime of normal silicon wafers on QSSPCD mode with different QHY concentrations and immersion time. We get the best lifetime value, which is 788 µs, and its SRV is 13 cm/s, on the best condition of 0.01 mol/L with immersion time for 60 miuntes. Then, we analyze its surface bonding by the spectrums of C1s, O1s, and Si2p of XPS, and verify that these QHY-passivation silicon wafers exist the binding signals of Si-O, C-C and C-O on its surface and under the surface for 2 to 4 nm, and this confirms the fact that the process of QHY passivation would improve the surface defects of silicon wafers.The surface defects of silicon thin film are improved in the way of QHY surface passivation; in addition, its effective lifetime is promoted; then, we process it into a silicon solar cell after we coat the ITO and electrode on it. Finally, measured by AM1.5 light source, the open circuit voltage of QHY-surface-passivation silicon thin film is increased from 553.5 mV to 570.7 mV, its FF is increased from 61.5% to 69.62%, and its conversion efficiency is increased from 11.71% to 12.47%.
顯示於類別:	[光電科學研究所] 博碩士論文

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