於本篇論文中，主要探討如何改善既有的三維直角座標之P-N球接面模擬程式的電腦運算時間。我們利用了小角度的切割方式，將原本的元件，分成矽與二氧化矽兩個部份，其中矽是一小部分的體積，二氧化矽是滿足元件必須是長方體的填充物。如此一來，我們在最簡單的三維直角座標環境之下，可以將模擬的時間，改善到只需要原本的百分之一即可。然後，進一步的探討，經由改善之後的程式來模擬P-N接面的各種不同參數之設定，結果是合理的，證明了我們所開發的環境是沒有問題，具有參考價值的。In this thesis, the major discussion is to improve the computer calculation time with the original simulation program in 3D rectangular coordinates. The small-angle method is used to divide the original silicon component into two parts. One is silicon region and the other is silicon-oxide region. The silicon region is inside the small-angle region, and we use the added silicon-oxide region to meet the simulation in 3D rectangular coordinates. Using this method, the simulation time is reduced to only one percent of the original. Further, the developed method is verified for its validity by the test with different parameters. So the small-angle method in 3D rectangular coordinates is workable and valuable.
