常壓電漿智切法在矽基上合成單晶磷化銦材料;Integration of Atmospheric Pressure Plasma with Smart Cut Process to Fabricate Single Crystal InP on Silicon Materials

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題名:	常壓電漿智切法在矽基上合成單晶磷化銦材料;Integration of Atmospheric Pressure Plasma with Smart Cut Process to Fabricate Single Crystal InP on Silicon Materials
作者:	李天錫
貢獻者:	中央大學材料科學與工程研究所
關鍵詞:	材料科技
日期:	2009-09-01
上傳時間:	2012-10-01 11:22:35 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	III-V族材料中，磷化銦具備良好的電子傳輸性質及光電特性，可作為光通訊主動元件。然而磷化銦塊材成本高昂，因此本研究以智切法(SmartCut®)在矽塊材之上製作磷化銦單晶薄膜(InP on Si)，除了降低材料成本，並可將此異質材料導入已經相當成熟的矽元件製程。在智切法中，藉由聚集氫離子形成氫氣泡而分離磷化銦薄膜所需的溫度約250~400°C，且矽與磷化銦異質晶圓鍵合製程中由於熱膨脹係數差異所產生之熱應力(矽：2.6x10-6/K, 磷化銦：4.6x10-6/K)在250°C之上便會使此異質鍵合晶圓對分離。因此本研究將探討在智切法製程中的晶圓鍵合步驟以低溫常壓電漿表面活化製程取代傳統熱處理製程，使鍵合強度在高於250°C時能夠大於氫離子聚集的劈裂面破裂強度，並足夠支撐因為熱應力差異所產生的鍵合面破裂強度，使磷化銦薄膜完整轉移。實驗過程中將以crack opening方法測量使用不同電漿操作參數而得的鍵合能，以XRD測量磷化銦轉移薄膜在不同溫度之下所承受之伸張應力，及霍爾量測檢測轉移之磷化銦薄膜電性，最後再以電子顯微鏡檢試轉移薄膜的品質。 ; InP substrate, one of III-V compound semiconductors, is a good candidate for opto-communication active device fabrication due to its high carrier mobility and superior optoelectronic characteristics. However, bulk InP substrate is too expensive to apply generally. Recently, Smart Cut® technique for monolithic integration of InP with silicon is interesting. The integrated InP on Si substrate can decrease cost and be available to mature silicon processing. In Smart Cut® technique, the critical temperature for InP layer splitting resulted from H ion nucleation and then H2 bubbles formation is approximately 250~400°C. In addition, the thermal stress resulted from different coefficients of thermal expansion (Si: 2.6x10-6/K, InP: 4.6x10-6/K) could cause heterogeneous bonding pair (InP/Si) failed above 250°C. Thus, this research attempts to replace low temperature atmosphere plasma active bonding process with conventional thermal induced bonding process. We hope to achieve the bonding strength which is higher than the material strength of H accumulated depth and sufficiently hold the thermal stress induced splitting in the bonding interface. Consequently, transferring whole wafer size InP layer to Si substrate is objective. Crack-opening method will be used to calculate bonding energy of bonding pairs treated with different atmosphere plasma parameters. XRD measurement will be used for calculating stress in transferred InP film after different thermal treatments. Electrical properties of InP film will be measured by Hall measurement. Finally, cross-section transmission electron microscopy images could examine the quality of transferred InP film. ; 研究期間 9808 ~ 9907
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
顯示於類別:	[材料科學與工程研究所 ] 研究計畫

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