| 摘要: | 本計畫之主旨在研究n 型、p 型與n-p 型等三種透明導電摻雜鈧氧化物薄膜之結構與腐蝕行為。此三種含鈧大類透明氧化物薄膜，採用磁控式濺鍍法，由鋁、鈧、氧化鋅等三靶製作含3wt%鋁、鈧(0~2.37wt%Sc)共摻雜的n 型氧化鋅單層薄膜；以銅、鈧、銀等三靶反應式濺鍍製作CuScO2 及Ag-codped CuScO2 等p 型單層薄膜；以n 型氧化鋅單層膜被覆p 型單層膜所形成之n-p 型及p-n 型複層膜等薄膜，分別解析其結構與性質，並且探討其在人工海水環境中腐蝕試驗後之差異。基於鋅、鋁等價格低廉、資源豐富之元素所製作之摻鋁氧化鋅(Al-doped Zinc oxide, AZO)極具取代氧化銦錫(Indium tin oxide, ITO)透明導電膜之潛力，本研究室曾獲國科會支持(計畫名稱:『摻雜過渡元素於透明導電AZO 薄膜後之腐蝕特性研究』，編號:NSC 94-2216-E-008-008，部份研究結果發表於:Thin solid films (2007)一篇； Surface Coating and Technology 2 篇)。在研究過程，開發出摻雜鈧的嶄新AZO 薄膜，具備優越之導電率、光穿透率與抗腐蝕性，提出中華民國專利發明申請，目前已獲准公告中。由文獻報導得知: AZO 薄膜的主要缺點在於其抗蝕能力與導電率遠不如ITO 薄膜，此項鋁、鈧共摻雜氧化鋅薄膜，正好彌補此等缺點，其優越特性具極大之光電應用潛力。然而從目前有限的研究數據，尚難以理解此種薄膜具有此優越性之原因，其結構與特性之關係，值得深入研究。另一方面，銀、鈧與銅反應濺鍍之氧化物薄膜目前已成為重要之p 型含鈧透明導電膜，若由本研究開發之含 3wt%鋁、鈧(0~2.37wt%Sc)共摻雜的n 型氧化鋅與其搭配，製作n-p 型及p-n 型複層膜，將可獲得具高效率之透明太陽電池薄膜。由於文獻中對於上述n 型、p 型單層膜與n-p 型及p-n 型複層膜的穩定性和耐蝕性研究不多，此電穩定性與耐蝕性又是太陽電池薄膜的重要特性，值得深入探討。本計畫逐年之研究重點如下: 第一年: 共摻雜鋁、鈧(0~2.37wt%Sc)於氧化鋅的n 型濺鍍膜之結構解析與腐蝕試驗後之差異研究。第二年: 銀、鈧與銅反應濺鍍之氧化物薄膜之製作，結構解析與其腐蝕試驗後之差異研究。第三年: 由鋁、鈧(0~2.37wt%Sc)共摻雜之n 型氧化鋅薄膜與銀、鈧與銅反應濺鍍之p 型氧化物薄膜組合成n-p 型及p-n 型複層膜之製作，結構解析與其腐蝕試驗後之差異研究。 ; The electrochemical behavior of the Sc-doped conductive transparent oxides (including n-type Al, Sc-co-doped zinc oxides, p-type Sc-doped cuprous oxides and their n-p, p-n combination films) in the artificial seawater will be investigated. The films are prepared by DC and RF sputtering system by using three targets (ZnO, Al and Sc for the n-type films; Cu, Sc and Ag for the p-type films, respectively.) Al-doped ZnO (AZO) belongs to highly potential conductive transparent films compared to indium tin oxide (ITO) due to the rich resources and their cheap cost. Resulting from a project titled as “the corrosion behavior of the AZO films doped with transition metals”, granted by NSC in 2005 (contract No. NSC 94-2216-E-008-008), we have issued a patent of invention and published three journal papers (1 in Thin solid films (2007) and 2 in Surface Coating and Technology) regarding the innovative Sc-doped AZO films developed in our laboratory. Diluted dopants of Sc in AZO films leads to a prominent enhancement of the electrical conductivity and resistant to corrosion in saline environment. Although these films reveal highly potential application in the photonic industry, the effect of Sc-dopants on the crystal structure, electric property and the resistance to corrosion is still unknown and urgent to be investigated. Oxide films co-sputtered from three targets of Ag, Cu and Sc become an important p-type Sc-containing oxide used in photonic industry. In this work, we are interested in the structure, electrical property of the (0~2.37wt%)Sc-doped oxides and their response to saline environment. As compared to ITO, the monotonic AZO reveals much less conductivity and is less corrosion-resistant to saline environment thus incapable of use in the photonic applications, especially for photovoltaic cells. Although we have found that Sc-doping in the AZO films prominently enhances their conductivity and corrosion resistance, the role of Sc is still needed to be investigated. In this work, we endeavor to illustrate the contribution of the Sc-dopants to the electrical property and corrosion behavior of the AZO films. The annual goals are listed in the following: 1st year, investigation on the structure of the (0~2.37wt%Sc) Sc-doped AZO films prior to and post corrosion test. 2nd year, investigation on the structure of the Sc-doped oxides co-sputtered from the targets of Ag, Cu and Sc before and after corrosion test. 3rd year, investigation on the structure of the n-p and p-n films combined between Sc-doped AZO and CuScO2 films before and after corrosion test. ; 研究期間 9808 ~ 9907 |
