為了製作單晶應變矽層具有奈米等級的絕緣層上應變矽( strained silicon on insulator ； SSOI ) 材料，有別於以矽磊晶Si1-xGex 層為應力層，再磊晶一單晶矽薄膜層，造成單晶矽薄膜的應變；以一摻雜硼(p-type) 的矽基材，利用電化學腐蝕的控制，製作多孔矽 /矽( porous silicon / silicon ) 的介面，再利用熱氧化造成多孔矽/ 矽的應力使單晶矽層產生應變。然後與另一片以熱氧化法生長具有氧化層的矽晶圓，直接做晶圓鍵合與熱退火處理。而之後做薄膜轉移，不需利用氫離子聚合為基礎的智能切割法(Smart-CutR)，直接以氫氟酸溶液腐蝕移除多孔矽，進行薄膜的轉移，而留下具有應變的單晶矽薄膜。 ; To produce strained single crystal silicon layer with nano level, a Boron-doped (p-type) silicon substrate, using electrochemical corrosion control and production of porous silicon / silicon (PSi / Si) interface. Caused by thermal oxidation of PSi / Si structure , the single crystal silicon layer stressed to the strain；which is different fromA silicon epitaxial layer for Si1-xGex substrate to a silicon epitaxial layer film , resulting in single crystal silicon thin film strain. Then another film with the thermal oxidation method to the growth of the silicon oxide layer, direct wafer bonding done with thermal annealing. After doing layer transfer, without using hydrogen ion polymer-based Smart-CutR method, direct to hydrofluoric acid solution to remove corrosion porous silicon, the strain of single crystal silicon thin film will be staid. ; 研究期間 9708 ~ 9807
