通訊市場中越來越高的操作頻率要求及不斷降低之IC 供應電壓的工業標準，能夠操作在低電壓並具有高速傳輸性能的電晶體已經吸引越來越多的注意。相較於傳統砷化鎵的高電子可動度電晶體(HEMT)，以砷化銦為通道層的HEMT，具有更優異的傳輸性能。已有文獻證明，在相同元件性能下，砷化銦比起砷化鎵HEMT，其消耗功率僅需十分之一，比起磷化銦HEMT，亦僅需三分之一。因此從低功率及高速度的市場應用角度來看，此材料系統設計的HEMT，具有相當高的競爭性。基於前兩年於“超低功率及超高速之銻化物異質接面場效電晶體元件的開發 (I)(II)”計畫中由分子束磊晶(MBE)技術所發展出高品質之磊晶材料及最佳化之元件結構及製程，最後一年工作的重點主要在發展奈米級的電子束微影的閘極製程，製做超高頻元件。0.25 微米的閘極元件為前期的目標，期望能在後期發展出小於0.1 微米的閘極製程，並證明元件的超高頻性能。此外，吾亦將特性化此元件的1/f 及高頻雜音、消耗功率、功率密度、電流驅動能力及耐電壓等，以作為未來系統應用上的目的。藉由本計劃的進行，可將此砷化銦族的材料系統應用於高電子可動度電晶體的潛力作一系統的評估。除了證明改善的元件直流電性外，超低消耗功率下展現的高頻性能將提供單石微波毫米積體電路新的應用方向。本計劃除了上述之目標外，將就一些關鍵的技術作深入的學術研究。 ; High frequency performance added by reduced power supply is demanding in communication market. Any devices with superior transport properties and low operation voltge therefore draw more attention. Compared to conventional GaAs HEMTs, the ones with InAs as channel yield much higher electrical properties. The devices are very competitive from low-power and high-speed application points of view. However, a drawback of large amount of impact-ionized holes due to small InAs bandgap along with type II band lineup at InAs/AlSb hetero-interface results in abnormal high output conductance. We thus have to carefully design device structure to minimize the negative effect. Based on the developed device materials, layer structure, and process techniques in our former projects titled “Development for Ultra-Low Power, Ultra-High Speed Antimonide-Based HFETs (I) and (II)”, focus will be on realization of extra-high speed devices in this year. Key work is in specific the development of the e-beam gates. A 0.25μm gate is our first-stage goal and a gate with dimension smaller than 0.1μm is expected in the final. We can therefore demonstrate ultra-high speed devices using the developed gate process. In addition to high-frequency performance noise, power dissipation, power density, current driving capacity, and breakdown voltage will also be characterized. Realization of the device with extra high frequency and low operation voltage added by optimized DC electric behaviors will provide a new possible direction for MMIC application. In addition to the above work targets proposed at each stage, we will also implement academic studies to some key technologies in the project. ; 研究期間 9808 ~ 9907
