本研究為將點接觸(point-contact)電極結構的概念運用於異質接面太陽能電池(Heterojunction solar cell)上，期望以熱氧化矽和氮化矽所堆疊的鈍化層搭配點接觸電極的概念，運用在不同以往的異質接面太陽能電池結構上。 在本研究的點接觸形式是利用矽化鎳(NiSi)當作N型異質接面太陽能電池的背部電極。沒有和矽化鎳接觸部分以熱氧化矽與氮化矽的堆疊結構作矽基板表面鈍化。另外在元件的背部光學反射特性，我們探討鈍化層的厚度，使光經過背部電極作高反射，以提升太陽能電池的內、外部量子效應，進而增加太陽能電池效率。實驗證明此異質接面太陽能電池的轉換效率有10.5%，其開路電壓約為505 mV，短路電流密度約為36.7mA/cm2，填滿因子約為57%。We study the effect on point contact electrode of amorphous/crystalline silicon-heterojunction (SHJ) solar cells. The point-contact structure was using NiSi as back electrode. The area without NiSi was deposited with thermal oxide and silicon nitride as passivation layer. The thickness of passivation layer has been optimized to enhance device optical property, which means light go through the device will be reflected back by the back electrode. The internal and external quantum efficiency of solar cells thus could be improved. The result showed that the conversion efficiency of the SHJ solar cell is 10.5%, the open circuit voltage VOC is about 505 m V, the short-circuit current density JSC is 36.7 and fill factor FF is about 57% .
