本論文採用射頻磁控濺鍍系統製作氫摻雜氧化鋅(ZnO:H)及氫摻雜氧化鋅鎵(GZO:H)，在製程中控制適當的H2/Ar流量比，可濺鍍出高導電性與高穿透率之薄膜ZnO:H和GZO:H當窗層堆疊在CIGS-based 太陽能電池元件上，與傳統上常用的薄膜AZO當窗層堆疊在元件上相互比較後發現，元件ZnO:H的效率為13%比元件AZO的效率為12.4%提升了4.8%倍。與薄膜AZO相比，這是因為薄膜ZnO:H有較高的載子遷移率和較低的載子濃度，使得薄膜ZnO:H同時有相同的電阻率和在近紅外光波段有較高的穿透率，提升元件ZnO:H在近紅外光波段的短路電流。與薄膜AZO相比，雖然薄膜GZO:H有較低的電阻率，但是有較高的載子濃度，使得薄膜GZO:H在近紅外光波段的穿透率因為自由載子吸收增加而下降，造成元件GZO:H的短路電流下降而無法提升元件效率。因此薄膜ZnO:H是非常有潛力取代薄膜AZO當窗層堆疊在大面積尺寸的太陽能電池元件上，因為當薄膜厚度增加時，薄膜ZnO:H比薄膜AZO在近紅外光波段有更高的穿透率。We obtained the high conductivity and high optical transmittance of ZnO:H and GZO:H films deposited by using a RF magnetron sputtering system with the proper H2/Ar flow ratio. CIGS-based solar cells were fabricated with ZnO:H and GZO:H window layers to replace the conventional AZO window layer. It was found that the cell efficiencies were 12.4% and 13% for the AZO device and the ZnO:H device, respectively. The cell efficiency was enhanced by 4.8% for the ZnO:H device. The results show that the ZnO:H film is higher Hall mobility and lower carrier concentration than AZO film resulted in similar resistivity and higher optical transmittance in the near infrared (NIR). Therefore, the higher cell efficiency of ZnO:H device is due to the enhancement of the short-circuit current (Jsc) in the NIR. Although the GZO:H film is lower resistivity than AZO film due to the higher carrier concentration, the optical transmittance of the GZO:H film shows a decrease in the NIR due to a increase in free carrier absorption. Therefore, a decrease in cell efficiency of GZO:H device is due to a decrease in Jsc. Furthermore, when increasing the thickness of film, the ZnO:H film is more higher optical transmittance in the NIR than AZO film. The ZnO:H film is superior to the AZO film as window layer for the larger-area CIGS-based solar cells.
