In the semiconductor industry, the development of silicon on insulator (SOI) solves the happened problems, and improves the efficiency of solid state devices and reduces the loss of energy.It is usually using Smart-Cut to produce SOI.In Smart-Cut steps, The ion implantation step to switch the Ion Shower devices to replace the Ion Beam, found the co-implanted with impurities implanted silicon wafer. This study is about the Ion Shower devices to hydrogen ion implantation. No mass spectrometer during the experiment in this devices, implant the different elements co-implanted into the silicon wafer.In order to avoid co-implanted,layer of polysilicon layer is deposited on the wafer, with this structure to the barrier element other than hydrogen into the silicon layer inside. After polysilicon layer removed by CMP.
