近年來,許多團隊發表不少有機電晶體的研究。從典型的P-type材料到N-type材料的開發,期望能加速有機邏輯電路的商業應用。而隨著雙極性材料和元件結構被廣泛地開發,有機發光電晶體的研究更是吸引不少團隊躍躍欲試。 本論文重點在於吾人嘗試利用具有高載子遷移率之P-type有機材料DNTT與一N-type有機材料DFH-4T進行堆疊結構的電晶體元件研究。在堆疊之前,吾人對單層的P-type和N-type有機材料進行電性量測與優化。接著,藉由將DNTT材料沉積於DFH-4T材料上,大大的提升了兩材料的電性表現,成功製作出具有載子高遷移率雙極性電晶體。此外,進一步將發光層BSB-Cz置入於P-type與N-type材料之間,形成p-channel/emitter/n-channel結構,也成功地看到平衡的雙載子傳輸特性以及電晶體的發光行為。 In recent years, there have been numerous studies on organic transistors. More varieties of P- and N-type materials have been developed to speed up the commercial application of organic logic circuits. The development of ambipolar materials and device structures also facilitate the research of organic light-emitting transistors. This thesis focuses on the electrical characteristics of multilayer organic field effect transistors. The organic p-type material DNTT and n-type material DFH-4T are employed to fabricate the active components. First, I characterize the electrical properties of single-layer DNTT and DFH-4T transistors independently. Then, as depositing DNTT on top of DFH-4T, I show that such bilayer transistors exhibit greatly enhanced hole and electron mobilities as compared with their respective single-layer transistors. The high electron and hole mobilities ambipolar transistor can be achieved. In addition, I place a light-emitting material BSB-Cz within the P-type and N-type material to form p-channel/emitter/n-channel trilayer structure, In this architecture, balanced ambipolar transport properties and electrical luminescence are successfully demonstrated.