本研究旨在探討濺鍍製作摻雜含氫矽薄膜用於矽異質接面太陽能電池上(Silicon Heterojunction solar cell, SHJ solar cell)與矽基板表面鈍化處理探討。濺鍍之優勢在於無毒製程，其工作氣體僅有氬氣與氫氣，透過適當的靶材選用即可，不過濺鍍之矽薄膜摻雜不易，可藉由額外硼顆粒置於P型矽靶材上幫助摻雜；且濺鍍過程中易有轟擊效應破壞薄膜表面，調整製程參數如加大靶材到基板距離、減低功率可減低此效應，如何以濺鍍方式製作出應用於異質接面電池等級之矽薄膜與完整的元件製作流程為本研究主要目標。透過主動層優化與金屬電極挑選，最佳之元件表現轉換效率12.3 % 、開路電壓507 mV、短路電流36.1 mA/cm2 與填充因子66.8 %。 矽異質接面電池中PN介面處理決定了元件品質，其中為了有好的PN介面常利用本質層鈍化矽表面及化學表面處理，本研究透過化學處理方式得到缺陷密度最低之矽表面並探討各種化學處理對於矽表面反應機制，研究與分析結果顯示以80 ℃去離子水處理之樣品有最佳鈍化效果及元件表現。 ? This research aims at the applications of boron-doped silicon thin films fabricated by rf-magnetron sputtering and wet-chemical pretreatment on silicon heterojunction solar cell (SHJ solar cell). The advantage of sputtering method is its nontoxic process. The silicon thin film deposited by sputtering method needs argon and hydrogen as the working gases and the suitable target. However the disadvantages of the sputtering method are its serious ion-bombardment and low doping efficiency. One of the solutions is to increase the distance between target and substrate to avoid the ion-bombardment and place boron grains on target to enhance thin film doping concentration. In the research, we analyzed the p-type silicon film deposited using sputtering method and applied to the silicon heterojuction solar cell. After the optimizations of the active layer thickness and metal electrode material, the best device performance is achieved with conversion efficiency 12.3 %, open-circuit voltage 507 mV, short-circuit current 36.1 mA/cm2, and fill factor 66.8 %. The performances of PV devices are influenced by the PN interface in silicon heterojunction solar cell. In order to have a better interface quality, the intrinsic silicon thin film passivation and wet-chemical pretreatment is very important. In this thesis, a wet-chemical pretreatment is applied to reduce the defect density of the silicon surface. The results showed that when the wafer was cleaned under an 80℃ deionized-water treatment, the defect density can be reduced and the wafer has the best surface quality.
