English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65318/65318 (100%)
Visitors : 21972195      Online Users : 1032
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/61498

    Title: 研究以雷射進行基板之前置處理來達到控制脈衝雷射沉積的矽鍺量子點的尺寸分布的可行性;Feasibility study of the control of the size distribution of Ge/Si quantum dots grown with pulsed laser deposition by laser pre-processing of the substrate
    Authors: 黃家麟;Huang,Jia-lin
    Contributors: 物理學系
    Keywords: 雷射脈衝沉積;量子點;雷射激發表面週期性結構;Pulsed laser deposition;Ge/Si quantum dots;Laser-induced periodic surface structure
    Date: 2013-08-29
    Issue Date: 2013-10-08 15:16:02 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 量子點在目前的應用上,已有包括量子電腦、量子點雷射、量子
    The quantum dots have been widely applied on several region like quantum computer, quantum dots laser, and quantum dot solar cell etc..The most important property of quantum dots for application is that his photoluminescence spectrum is discret and the emission wavelength is corresponded to the quantum dots size.To achieve the control of the size distribution and the position, many methods have been used and investigated like electron beam lithography, ion beam patterning and optical lithography etc..

    Here we study the feasibility of the control of the size distribution of quantum dots by laser pre-processing of substrate.In the beginning we use long pulse laser to produce laser-induced periodic surface structure with long pulsed laser.And then the self-assembled Ge/Si quantum dots was grown with pulsed laser deposition on this kind of laser-induced periodic surface structure to achieve the control of the size distribution of Ge/Si quantum dots.For our prediction the Ge/Si quantum dots should be located in the valley of laser-induced periodic surface structure.

    In this thesis we show how to produce the laser-induced surface structure on the silicon substrate and also have some comparison of the theoretical calculation and experimental data.The next we grew the Ge/Si quantum dots with pulsed laser deposition with the parameter refered to the past papers.Finally, we combined these two process hope to produced location-confined Ge/Si quantum dots on the laser pre-processing substrate. But we couldn't find any Ge/Si quantum dots whether in laser-induced periodic surface structure or not.Maybe the reason for this phenomenon is that the unclean silicon substrate caused the unstability of the growth of Ge/Si quantum dots.The actual reason will be claritied in the future.
    Appears in Collections:[物理研究所] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明