嵌段共聚高分子混摻複合材料於高密度奈米記憶體元件應用;Block Copolymers Hybrid Composites for High Density Nanoscale Memory Device Application

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题名:	嵌段共聚高分子混摻複合材料於高密度奈米記憶體元件應用;Block Copolymers Hybrid Composites for High Density Nanoscale Memory Device Application
作者:	劉振良
贡献者:	國立中央大學化學工程與材料工程學系
关键词:	化學工程;材料科技
日期:	2012-12-01
上传时间:	2014-03-17 11:30:02 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	研究期間：10108~10207;Tremendous effort has been made to develop high density and low cost solid-state storage devices. In fact, traditional Si-based technologies are currently facing the theoretical and physical limits of downscaling. Organic polymers-based memories have proposed as an emerging active part for next generation information storage technology due to the advantages of rich structure flexibility, low cost, solution processability and three-dimensional stacking capability. However, large aggregate is an issue that prevents the realization of nanopattern of memory cells with nanoscale periodicity. It will be important in future memory device as the scaling continues and selective positioning of nano-storage materials still remains a challenge and special techniques are often needed to achieve this goal. The purpose of this research is focused on “preparation of nanoscale high-density organic polymeric memory devices”. The applicant proposes the self-assembly block copolymers hybrid composites by bottom-up approaches for building periodic nanostructured storage elements featuring a nanoscale bit size. Block copolymers can use as host matrix/template for positioning with functional nanofiller via non-covalent hydrogen bonding interaction that functions as memory switching elements. Two architectures, resistor- and transistor- memories, will be demonstrated for nanoscale high density memory device. In the three-year proposed project, the following issues will be developed: (1) Preparation of block copolymers/small molecules supramolecular assemblies for resistor memories in a vertical structure configuration. (2) Block copolymers nanotemplate for surface patterning carbon nanotube and its application on resistor memories in a lateral structure configuration. (3) Hybrid composites based on (1) and (2) for three-terminal electronic transistor memories. (4) Optimization of memory device performance through processing condition and verification of device physics and switching mechanism. The relationship between chemical structures, electronic properties, morphologies and memory characterisitics will be established for overcoming scaling limits and bridging the organic polymer memory a step closer to the reality.
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
显示于类别:	[化學工程與材料工程學系 ] 研究計畫

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