半導體量子點及合金薄膜之光學特性研究;Optical Properties of Semiconductor Quantum Dots and Alloy Films

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/62705

Title:	半導體量子點及合金薄膜之光學特性研究;Optical Properties of Semiconductor Quantum Dots and Alloy Films
Authors:	徐子民;鄭劭家
Contributors:	國立中央大學物理學系
Keywords:	物理;光電工程
Date:	2012-12-01
Issue Date:	2014-03-17 12:00:54 (UTC+8)
Publisher:	行政院國家科學委員會
Abstract:	研究期間：10108~10207;The InGaAs quantum dots, Ge quantum dots and the ZnSe1-xOx alloy films are materials which are important for photonic device applications. In this project, we propose to study the photon emission properties of these materials. For the InGaAs quantum dot system, we focus on the laser properties of quantum dots embedded in q-L2 photonic crystal nanocavity; and the development of the AFM oxidization technique on the photonic crystal nanocavity. For the Ge quantum dot, the enhancement of quantum dot direct emission will be investigated. In the ZnSe1-xOx alloy films, we will study the mechanism of energy band gap reduction. Spectral characteristics of these materials will be performed using the micro-photoluminescence and time-resolved photoluminescence, HBT interferometer, Michelson interferometer, and the photoreflectance. Experimental results will be compared with the theories.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Physics] Research Project

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