含Benzimidazole之電子傳輸材料及其電激發光元件; Benzimidazole-Based Electron-transporting Materials for Electroluminescent Device

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题名:	含Benzimidazole之電子傳輸材料及其電激發光元件;Benzimidazole-Based Electron-transporting Materials for Electroluminescent Device
作者:	賴玫儀;Mei-yi Lai
贡献者:	化學研究所
关键词:	有機發光二極體;電子傳輸材料;electron-transporting materials;OLEDs
日期:	2007-07-06
上传时间:	2009-09-22 10:16:44 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	我們利用簡單合成，成功得到一系列含benzimidazole 或arylamine 之衍生物，其螢光光色從紫藍到橘紅。此系列化合物具有好的熱穩定性其玻璃轉換溫度（Tg）介於104 - 170 oC 及熱裂解溫度（Td）介於340 - 493 oC。元件製程應用方面，（i）多層元件：以EF-II 為電子傳輸材料；Alq3 為發光材料；NPB 為電洞傳輸材料之元件，ITO/NPB/Alq3/EF-II/LiF/Al，其發光效率為： ext 1.9%；3.2 lm/W；5.9 cd/A at 100 mA/cm2。（ii）以ITO/NPB/cpd/LiF/ Al 之雙層元件結構，化合物為電子兼發光材料，有不錯的元件效率。（iii）單層元件：含benzimidazole 與arylamine 之化合物，有良好的電子、電洞傳輸速率（~10-5 cm2/(V·s)），製成單層元件ITO/cpd/LiF/ Al（cpd＝EF-I-N、 EF-I-N2、SPY-I-N）展現很好的發光效率及純藍至藍綠的光色，其中EF-I-N 元件效率及CIE 座標如下： ext 3.5%; 1.8 lm/W; 3.6 cd/A at 100 mA/cm2，CIE （0.14, 0.12）。（iv）單層磷光元件：以雙極化分子化合物SPY-I-N 為主發光體，叄雜黃色磷光材料Ir(fbi)2(acac)，其元件結構可簡化製成單層元件 ITO/SPY-I-N: Ir(fbi)2(acac) 5%/LiF/Al，顯示出極優的發光效率為： ext 6.9%；4.4 lm/W；20 cd/A at 100 mA/cm2，此效率與傳統多層磷光元件相近，故利用此雙極化分子（ambipolar）可簡化傳統製成，具極大的應用價值。 In this study, we have sucessfully synthesized a series of compound containing benzimidazole and/or arylamine moieties. These compounds emit from purple- blue to orange-red. These compounds are amorphous with glass transition temperatures ranging from 104 to 170 oC and high thermal decomposition temperature (Td > 340 oC) . Among them, EF-I-N, EF-I-N2, SPY-I-N exhibited both good electron- and hole-transporting (mobilities ~10-5 cm2/(V·s)) and emitting abilities. The single-layer devices (ITO/cpd/LiF/Al) of them showed good performance( ext 3.5%; 1.8 lm/W; 3.6 cd/A at 100 mA/cm2 for EF-I-N based device). In addition, bi-layer electroluminescent devices of good performance ( ext 4.2%；3.1 lm/W；4.4 cd/A at 100 mA/cm2 for EF-I-N based device) have also been achieved using these materials as the electron-transporting and emitting layer. Compound EF-II can be used as electron-transporting layer. The device using Alq3 as the emitting layer and NPB as the hole-transporting layer, ITO/NPB/Alq3/EF-II/LiF/Al, exhibited good performance: ext 1.9%; 3.2 lm/W; 5.9 cd/A at 100 mA/cm2. Moreover, SPY-I-N can serve as a good host for phosphorescent materials. The single-layer device, ITO/SPY-I-N:Ir(fbi)2(acac) 5% (80 nm)/LiF/Al, usingIr(fbi)2(acac) as emissive dopant exhibited high efficiency: ext 6.9%；4.4 lm/W；20 cd/A at 100 mA/cm2.
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