我們已開發出不對稱的三併環噻吩NS-DTT、不對稱的四併環噻吩PF-TTA與對稱雙取代的四併環噻吩DNS-TTA，元件製作的部分，由西北大學Tobin J. Marks實驗室以真空蒸鍍的方法製備，目前已測量出DNS-TTA為一P型有機半導體材料，其在真空下的載子移動率為1.9×10-3 cm2 /(V•s)，此外在空氣下操作仍然具有場效性質，其載子移動率為2.0×10-3 cm2 /(V•s)。另外，FP-TTA也為一P型有機半導體材料，其載子移動率為1.4×10-3 cm2 /(V•s)。目前元件製作的條件還在尋找最適合的製成條件，希望在電性的表現能有所提升。 Asymmetric NS-DTT and FP-TTA as well as symmetric DNS-TTA have been synthesized. The device fabrications of all the materials are currently assisted by Tobin J. Marks group at Northwestern University. All three molecules are P-type materials. DNS-TTA is exhibited mobility of 1.9×10-3 cm2/(V•s) in vacuum. Particularly, DNS-TTA demonstrated mobility of 2.0×10-3 cm2/(V•s) in air. FP-TTA exhibited TFT performance with mobility 1.4×10-3 cm2/(V•s). Hopefully, better mobility will be obtained in the future.
