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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/62786

    Title: 離子佈植矽的再結晶 : 非線性動力學研究;Recrystallization of ion implanted silicon : a non-linear dynamics study
    Authors: 溫偉源
    Contributors: 國立中央大學物理學系
    Keywords: 物理
    Date: 2013-12-01
    Issue Date: 2014-03-17 12:03:02 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 研究期間:10208~10307;In this proposed three-year project, we seek to further investigate the dynamics of the interplay between doping and isovalent impurities, under the influence of local strain or micro-environment variation. Impurities doped amorphized silicon carbon or silicon germanium alloys recrystallize into pseudomorphically strained single crystalline by solid phase epitaxial regrowth (SPER) under non-melting thermal excitation. SPER dynamics are determined by the internal strain and doping profiles in the system. The dopant solid solubility limit depends not only on annealing temperature but also local strain in the lattice due to bond deformation. So far no systematic experiment has been conducted to assess this issue. By in situ monitoring the time resolved reflectivity (TRR) signals, we seek to establish the correlation between SPER dynamics and dopant solid solubility. Furthermore, by systematic varying the strain-doping conditions in the experiment, we seek to achieve precise measurement methodology for understanding the physics behind the solid solubility limit issue in silicon by the in-situ optical based technique. By constructing a half-home-made photoluminescence mapping system, we seek to understand the band gap tuning in the materials due to the strain-doping conditions. We seek to build a non-linear model for the qualitative description of the complex behavior based on experimental data above. The understanding of dopant activation and diffusion in relation to defects in confined region is another topic we are pursuing in this proposal. We seek to combine our knowledge in SPER with scanning probe microscopy based dopant activation/diffusion measurement. The complex dynamics of dopant evolution during SPER and defect recovery in confined regions is still a poorly explored topic. Through sub-micron confinement construction by photolithography, we seek to build a multi-purposes experiment template for investigation of various systematic micro-loading effects. Besides the systematic variation, we also plan to study process related variation such as line edge roughness (LER) issues. Non-linear analysis techniques will be employed to understand the multiple length scale phenomena. We expect the finding should leads to direct impact to the micro-electronic manufacturing communities. Besides the investigations conducted in current tools configurations, we seek to build upgraded systems to improve both the resolution and stability in our existing system. We seek to build an in situ optical monitoring rapid thermal annealing (RTA) for high temperature, fast and high precision SPER dynamics measurement. We also seek to improve the scanning probe microscopy based dopant detection methodology for better environment control, tip modification and surface treatment to achieve more stable, higher resolution and lower signal to noise ratio system. We believe the effort of constructing a one-of-a-kind system is worthwhile for future works.
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[物理學系] 研究計畫

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