以純度為99.99 % 的鋁基材於0.3M草酸溶液下進行二次的陽極處理，製備孔洞直徑為60奈米、厚度為90微米的氧化鋁膜模板，作為沉積鉍(Bismuth)與鈷(Cobalt)金屬奈米線之模板。 三電極系統中以背後鍍金的多孔性氧化鋁膜模板為工作電極，用電化學沉積法在0.008M硝酸鉍溶液與0.14M硫酸鈷溶液中，分別施加電壓為-0.15伏特與-1.0伏特進行氧化還原反應，使電鍍溶液中的金屬離子還原沉積在氧化鋁膜模板的孔洞中，得到排列整齊直徑為60奈米的鉍金屬與75奈米的鈷金屬奈米線陣列。 利用物理性質測量系統(PPMS)與超導量子干涉測量儀(SQUID)測量鈷奈米線的電阻與磁性和溫度的關係。 The anodic aluminum oxide (AAO) was prepared from high-purity (99.99%) aluminum foil in 0.3M oxalic acid electrolyte by a two-step anodization process. The anodic aluminum oxide (AAO) with pore size 60 nm and channel length 90 μm was used to fabricate pure bismuth and cobalt nanowires. A Au layer was sputtered on one side of the anodic aluminum oxide (AAO) to serve as the working electrode in a standard three-electrode electrochemical cell. Solutions of 0.008M bismuth nitrate and 0.14M cobalt sulfate heptahydrate were used as electrolytes of the electrodeposition process of the Bi and Co nanowires respectively. The potentiostatic electrochemical deposition of Bi and Co nanowires were performed with -0.15 V and -1.0V respectively. Diameters of the Bi and the Co nanowires were 60 nm and 75 nm respectively. The Physical Property Measurement System (PPMS) and Superconducting Quantum Interference Device Magnetometer (SQUID) were used to measure the resistance and magnetic properties of Co nanowire.