English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65275/65275 (100%)
Visitors : 20961243      Online Users : 316
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63044


    Title: p型半導體之量子井及量子線的熱電效應;Thermoelectric Properties of P Type Semiconductor Quantum Wells and Wires
    Authors: 郭明庭
    Contributors: 國立中央大學電機工程學系
    Keywords: 物理;電子電機工程
    Date: 2012-12-01
    Issue Date: 2014-03-17 14:17:42 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 研究期間:10108~10207;Due to energy and environment issues, it becomes important to understand the thermal properties of materials. Recently many efforts are to seek efficient thermoelectric materials because there exist potential applications of solid state thermal devices. Several methods were proposed to realize the enhancement of figure of merit (ZT) , one of them is to reduce system dimension such as quantum wells, quantum wires, and quantum dots. However, most of efforts have focused on the electron carriers. To realize thermoelectric devices, we need to consider not only the n-type semiconductors, but also p-type semiconductors for the application of coolers that require the condition of electrically in series and thermally in parallel. As a consequence, it is crucial to clarify the thermoelectric properties of semiconductor with hole carriers in the realization of thermoelectric devices. For electron carriers, parabolic band is employed to describe the relationship between energy and momentum. Nevertheless, a much more complicated band structure beyond parabolic band should be considered for holes due to its p orbital and spin-orbital interaction. In particular, there also exist the strain effect arising from the junction interface to modify the hole p-orbital band structure which yields the flat band with singularity density of states. In the first year, we would like to study thermoelectric properties of a single quantum well system with p-type doping. In the second year, we will consider quantum wires, and then finally . going to study quantum dot superlattices. Hole electrical conductivity, Seebeck coefficient, and hole thermal conductivity are calculated by Boltzmann equation. Lattice thermal conductivity is calculated two fluid model.
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML197View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明