English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65275/65275 (100%)
Visitors : 20910712      Online Users : 263
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63062


    Title: 成長於6吋矽基板之氮化鎵功率元件(1/3);GaN Power Devices Grown on 6 Inch Silicon Substrate(1/3)
    Authors: 綦振瀛
    Contributors: 國立中央大學電機工程學系
    Keywords: 電子電機工程;化學工程;材料科技
    Date: 2012-12-01
    Issue Date: 2014-03-17 14:18:07 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 研究期間:10106~10205;GaN power devices exhibit superior performance over their Si counterparts in terms of energy efficiency and high temperature operation. However, current GaN devices, which are mainly grown on sapphire substrates, are still too expensive to compete in the market. This has thus prompted a great deal of interests in developing metal-organic chemical vapor deposition (MOCVD) technology to grow GaN on large size Si substrates. In this proposal, we aim at high power GaN Schottky barrier diodes (SBDs) and normally-off GaN metal-insulator-semiconductor field-effect transistors (MIS FETs) that are grown on 6 inch Si substrates by our newly installed MOCVD system. Combining the efforts of device simulation and fabrication process development, we shall realize GaN power devices that fulfill the needs of new applications so as to create new business opportunities for the industry
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML184View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明