研究期間：10106~10205;GaN power devices exhibit superior performance over their Si counterparts in terms of energy efficiency and high temperature operation. However, current GaN devices, which are mainly grown on sapphire substrates, are still too expensive to compete in the market. This has thus prompted a great deal of interests in developing metal-organic chemical vapor deposition (MOCVD) technology to grow GaN on large size Si substrates. In this proposal, we aim at high power GaN Schottky barrier diodes (SBDs) and normally-off GaN metal-insulator-semiconductor field-effect transistors (MIS FETs) that are grown on 6 inch Si substrates by our newly installed MOCVD system. Combining the efforts of device simulation and fabrication process development, we shall realize GaN power devices that fulfill the needs of new applications so as to create new business opportunities for the industry
