利用二維元件數值模擬及推導解析公式來探討Junctionless MOSFET;Junctionless Mosfet Analysis by 2-Dimensional Device Simulation and Analytical-Model Development

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/63066

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63066

Title:	利用二維元件數值模擬及推導解析公式來探討Junctionless MOSFET;Junctionless Mosfet Analysis by 2-Dimensional Device Simulation and Analytical-Model Development
Authors:	蔡曜聰
Contributors:	國立中央大學電機工程學系
Keywords:	電子電機工程
Date:	2012-12-01
Issue Date:	2014-03-17 14:18:12 (UTC+8)
Publisher:	行政院國家科學委員會
Abstract:	研究期間：10108~10207;This project proposes to study the device operation of the junctionless MOSFET. The n-p-n structure is necessary from source to drain in the traditional n-channel MOSFET. There are two junctions from source to drain. However, the n-p-n structure is replaced by n-n-n structure from source to drain in the junctionless n-channel MOSFET. The junctionless MOSFET is capable of showing a good I-V characteristic. We will refer to reference papers to compare the traditional MOSFET and the junctionless MOSFET. Especially, there may be two types of current together in the junctionless MOSFET. One is the bulk current, the other is the accumulation current at the SiO2-Si interface. (I = I_bulk + I_accumulation), This project will help the researchers learn more device physics, and help our industry significantly.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	325	View/Open

社群 sharing