前瞻性銻化物異質材料整合及其高速低功率元件與可調式高頻電路應用之研究-子計畫二：前瞻性砷化鎵銻化物雙極管和N及P通道異質接面場效電晶體製程於高性能相位陣列積體電路之研究;Research on Advanced Gaas and Antimonide-Based Hbt N- and P-Channel Quantum-Well Fet for High-Performance Phase Array Monolithic Integrated Circuits

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/63077

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63077

Title:	前瞻性銻化物異質材料整合及其高速低功率元件與可調式高頻電路應用之研究-子計畫二：前瞻性砷化鎵銻化物雙極管和N及P通道異質接面場效電晶體製程於高性能相位陣列積體電路之研究;Research on Advanced Gaas and Antimonide-Based Hbt N- and P-Channel Quantum-Well Fet for High-Performance Phase Array Monolithic Integrated Circuits
Authors:	張鴻埜
Contributors:	國立中央大學電機工程學系
Keywords:	電子電機工程;材料科技
Date:	2012-12-01
Issue Date:	2014-03-17 14:18:28 (UTC+8)
Publisher:	行政院國家科學委員會
Abstract:	研究期間：10108~10207;This project proposes the research and development of the high-performance microwave and high-speed mixed-mode circuits using the GaAs BiFET and antimonide based compound semiconductor (ABCS) technologies. The BiFET technology consists of HBT and HEMT transistors; while the ABCS technology consists of N- and P-channel Quantum-Well FET transistors. The complementary topology can be adopted for the circuit design using the ABCS technology, and the developed technologies will be further applied to the low-power high-speed analog mixed-mode circuits. The ABCS technology has great potential for the next generation transistor due to its superior performance. The receiver front-end, local oscillator and high-speed digital modulation/demodulation circuits for a high-performance phase array system will be developed in this research project. The features of the adopted processes are high performance, low voltage and low power. Also, the developed technologies can be further applied to the green electronics. In this research project, a few innovative circuit topologies will also be proposed to apply to the circuit development using the GaAs and ABCS BiFET processes. The project will be carried out following the below procedures, 1) design and simulate the phase array system, 2) establish the design goals of sub-circuit systems, 3) survey the related integrated circuit foundries and the device modeling, 4) establish the passive components, 5) implement and fabricate the single-circuit chips, 6) measure and verify the chips or the hybrid circuits, 7) integrate the sub-circuit into a module, and 8) investigate the experimental results. In this 3-year project, the establishment of the circuit development using the GaAs and ABCS BiFET technologies, the innovative MMIC designs, the related technologies of the microwave measurement and the K-band phase array will be achieved. The project participants will be also trained to gain the phase array system and the related experiences.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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