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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63085


    Title: 氧化物太陽電池磊晶技術開發;Epitaxial Growth of Oxide Solar Cells
    Authors: 綦振瀛
    Contributors: 國立中央大學電機工程學系
    Keywords: 能源工程
    Date: 2012-12-01
    Issue Date: 2014-03-17 14:18:38 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 研究期間:10101~10112;The conversion efficiency of a single junction solar cell with an intermediate band in the bang gap theoretically could be higher than that of a triple-junction solar cell by expanding the absorption spectrum without sacrificing the open-circuit voltage. Introducing O to ZnSe could generate an intermediate band in the band gap. Tunable band gap can also be achieved by changing its O content. These properties make ZnSe-based dilute oxides very attractive in solar cell application. According to our previous study, high quality ZnSeO can be grown on GaAs under specific growth conditions. In this work, we will focus on the growth and characterization of intermediate band ZnSeO heterostructures. ZnSeO solar cells will be designed and fabricated for the first time.
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

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