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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63097


    Title: 新型高速高響應度850nm矽光檢器;Novel High-Speed High-Responsivity 850nm Si Photodiode
    Authors: 辛裕明
    Contributors: 國立中央大學電機工程學系
    Keywords: 電子電機工程;光電工程
    Date: 2012-12-01
    Issue Date: 2014-03-17 14:18:57 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 研究期間:10108~10207;This two-year proposal is to implement new high-speed Si photodiodes in standard CMOS technology. It is possible to integrate Si PD and mature circuits by using CMOS technology for the short-range communication application. However, it is difficult to obtain good performance using Si material as optical devices due to its indirect bandgap and low carrier mobility. We have presented some results in journals with record high bandwidth of 8.7 GHz. Therefore, we continue to improve Si photodiodes by different approaches. There are eight topics in the proposal including (1) improved PD bandwidth by removing slow diffusion carriers in the substrate, (2) new PD layout with deep n-well structure and optimal bias, (3) optimal surface passivation for 850nm wavelength light incident, (4) new Si PD with MEMS technology to remove slow diffusion carriers, (5) avalanche Si photodiode in CMOS technology, (6) edge-coupled Si PD, (7) Si PD with TIA/LA integration, (8) crosstalk study in a multi-channel PD layout.
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

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