研究期間：10108~10207;This two-year proposal is to implement new high-speed Si photodiodes in standard CMOS technology. It is possible to integrate Si PD and mature circuits by using CMOS technology for the short-range communication application. However, it is difficult to obtain good performance using Si material as optical devices due to its indirect bandgap and low carrier mobility. We have presented some results in journals with record high bandwidth of 8.7 GHz. Therefore, we continue to improve Si photodiodes by different approaches. There are eight topics in the proposal including (1) improved PD bandwidth by removing slow diffusion carriers in the substrate, (2) new PD layout with deep n-well structure and optimal bias, (3) optimal surface passivation for 850nm wavelength light incident, (4) new Si PD with MEMS technology to remove slow diffusion carriers, (5) avalanche Si photodiode in CMOS technology, (6) edge-coupled Si PD, (7) Si PD with TIA/LA integration, (8) crosstalk study in a multi-channel PD layout.