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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63162


    Title: 整合於矽基板上之高遷移率三五族互補式金氧半鰭式場效電晶體;High Mobility III-V CMOS FINFETs on Si
    Authors: 綦振瀛
    Contributors: 國立中央大學電機工程學系
    Keywords: 電子電機工程
    Date: 2013-12-01
    Issue Date: 2014-03-17 14:20:29 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 研究期間:10208~10307;With the continuous increase in transistor count and clock frequency, the power density of current Si integrated circuits has reached a level that requires a revolutionary change in transistor technology. Among the candidates in the ball park, III-V compound semiconductor devices are considered most feasible. This three-year project aims at monolithic integration of Sb-based CMOS FinFETs on Si. In the first year, epitaxial growth of Sb-based heterostructures, interface of hgh-k dielectrics on antimonides, and planar InAs high electron mobility as well as InGaSb high hole mobility MOSFETs will be investigated. In the second year, technologies for nano-scale FinFETs and CMOS FETs will be developed. In the third year, Monolithic integration of III-V CMOS FinFETs will be realized on Si substrate. Novel devices, such as nano-wire type MOSFETs, will also be explored.
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

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