研究期間：10208~10307;In general, multi-junction Silicon thin film solar cells and HIT (Hertero-junction Intrisinic Thin Film) solar cells use Plasma Enhanced Chemical Vapor Deposition (PECVD) in deposition of various interfacial structures on Amorphous silicon (a-Si) thin film. However, PECVD has generated a lot of ion bombardments on interface of the film and then needs to follow by various process treatments to remove these interfacial defects caused by ion bombardments. This project will incorporate with Optical Science Center of NCU in developing Electron cyclotron resonance and inductively coupled plasma chemical vapor deposition (ECR/ICP CVD) to replace PECVD for improvement of silicon thin film processes. In order to have a technology breakthrough in processing a low cost with high efficiency solar cell, a subsystem by reduction of using imported key components for ECR/ICP CVD will be developed. This subsystem is to carry out a plasma reaction mechanism study. The subsystem will include a plasma simulation module, a Langmuir probe that could diagnose plasma in high magnetic field , an integrated optical emission spectroscopy (OES) and an quadrupole mass spectrometer. The objective of this research is to obtain the optimized control parameters from simulation module, and plasma diagnostic system. This approach is not only providing precisely controlled parameters which are related to plasma characters and process film quality but also obtaining data with back and force in simulation model for improving reliability of the internal plasma fields and plasma distribution in the system in order for reaching a quality thin film and good uniformity in a large area and larger process window for ECR/ICP CVD system. In summary, the overall objectives of project include: (1) to develop a 3D simulation module for silicon thin film process (2) to develop a Langmuir probes could eliminate the magnetic field and RF obstruction . (3) to investigate the reaction and doped mechanism for thin film deposition (4) to improve the large area silicon thin film uniformity. (5) optimization of Process parameters.