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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/63497


    Title: 以噴塗技術在不銹鋼基板上沉積氧化矽阻隔層應用於可撓式CIGS太陽電池之研究;Investigation of SiOx barrier layers deposited by spray technique for flexible CIGS solar cells on metallic substrates
    Authors: 曾千洧;Tseng,Chien-wei
    Contributors: 能源工程研究所
    Keywords: 噴霧裂解法;溶膠噴塗法;阻隔層薄膜;不銹鋼基板;銅銦鎵硒太陽電池;spray pyrolysis deposition;aerosol spraying;barriers;stainless steel substrate;CIGS solar cell
    Date: 2014-01-21
    Issue Date: 2014-04-02 15:40:56 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本研究使用噴霧裂解法及溶膠噴塗法在不銹鋼基板上沉積SiOx阻隔層薄膜,實驗在阻隔層上依序沉積鉬背電極與CIGS吸收層。噴霧裂解法及溶膠噴塗法由於其製程成本低與操作簡單等優點,故近年來以此技術製備薄膜的技術受到重視。氧化矽絕緣層性質研究包含阻擋雜質擴散、微結構、成分、鍵結與電性絕緣分析等。實驗以AFM量測材料表面形貌,並藉由SEM、TEM及XRD觀察阻隔層材料微結構特徵、尺寸大小和殘留應力分析等。材料鍵結與元素分析使用XPS作進一步探討。實驗結果證實以溶膠噴塗製備氧化矽薄膜且厚度為200 nm時即可獲得極佳之阻隔層材料並同時達到可撓式CIGS太陽電池各項需求。; In this study, SiOx layers were fabricated by spray pyrolysis deposition (SPD) and aerosol spraying as diffusion barriers between the stainless steel (SS) substrate (SUS430) and the molybdenum back contact layer in CuIn1-xGaxSe2 (CIGS) thin-film solar cells. SPD and aerosol spraying for SiOx layers are attractive processes for the deposition of thin films due to their low cost and controllable properties especially for solar cells on SS foils since a good barrier layer is required to prevent the Fe impurities (ions) defusing from SS substrate to the cells. The properties of SiOx barriers including thermal stability, microstructure content, electrical insulation and thickness of SiOx layers were investigated. The surface morphology and surface roughness were observed by scanning electron microscope and atomic force microscope. A transmission electron microscopy and X-ray diffractometer are adopted to measure the microstructural characteristics, grain size, and residual stresses of films. The chemical composition of the dielectric barriers was analyzed by X-ray photoelectron spectroscopy. The experimental results shows the specific thickness at 200 nm of SiOx layer will cause the absorber layer has the single chalcopyrite phase structure with (112) preferred orientation. The effects from the results revealed that the cells with a SiOx barrier layer fabricated by aerosol spraying provided a promising process in obtaining better CIGS cell performance.
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