本論文利用電子豐盈芳香環與缺電子芳香環彼此之相互作用力，將有利於分子堆疊，以期能強化電荷之傳導。所採用之電子豐盈芳香環包括thieno[3,2-b]thiophene、dithieno[3,2-b:2′,3′-a]thiophene、anthracene單元，缺電子芳香環則包括imidzole[1,2-a]pyrimidine、thaizole單元。藉由X-射線繞射儀的分析所合成出系列的化合物，可以得知含有thaizole化合物的結晶度明顯的比imidzole[1,2-a]- pyrimidine化合物好。其中含anthracene與thaizole之化合物DH(SN)2Ant並製成有機場效電晶體元件，化合物經由蒸鍍，沈積於表面經過OTS (octadecyltrichlorosilane)處理之Si基板後，在室溫下可測得電洞移動速率為1.8×10-3 cm2V-1s-1；將基板溫度加熱至60 ℃時，則電洞移動速率將會下降至2.8×10-4 cm2V-1s-1。我們並利用原子力顯微鏡所觀測的影像來瞭解薄膜形態與電洞移動速率之間的關聯。 We strategically design molecules with both electron-rich and electron-deficient aromatic segments because the favorable electronic interaction between them is expected to facilitate π—π interaction and lead to better carrier transport. The electron-rich moieties used include thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-a]thiophene, and anthracene, while imidzole[1,2-a]pyrimidine, and thaizole are used as the electron-deficient moieties. Power X-ray diffraction studies on the series of compounds synthesized indicate that thiazole-containing compounds exhibit better crystallinity than imidzole[1,2-a]- pyrimidine-containing compounds. One of the compound composed of anthracene and thaizole, DH(SN)2Ant, was fabricated into OFET device via vacuum deposition on the SiO2 substrate which was pre-treated with OTS (octadecyltrichlorosilane). The hole mobility measured in was calculated to be 1.8×10-3 cm2V-1s-1 for the organic film deposited at room temperature. However, the mobility decreased to 2.8×10-4 cm2V-1s-1 when temperature of the substrate was raised to 60 ℃ during deposition. Atomic force microscopy was used to analyze the deposited film in order to correlate the morphology of the film with the charge mobility.
