English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 64745/64745 (100%)
造訪人次 : 20457087      線上人數 : 270
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/6382


    題名: OFET材料:電子豐盈暨缺電子芳香環共組成化合物;OFET material:molecules with both electron-rich and electron-deficient aromatic
    作者: 李福壽;Fu-Shou Li
    貢獻者: 化學研究所
    關鍵詞: 缺電子;電子豐盈;OFET;electron-deficient;electron-rich;OFET
    日期: 2008-06-27
    上傳時間: 2009-09-22 10:18:34 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 本論文利用電子豐盈芳香環與缺電子芳香環彼此之相互作用力,將有利於分子堆疊,以期能強化電荷之傳導。所採用之電子豐盈芳香環包括thieno[3,2-b]thiophene、dithieno[3,2-b:2′,3′-a]thiophene、anthracene單元,缺電子芳香環則包括imidzole[1,2-a]pyrimidine、thaizole單元。藉由X-射線繞射儀的分析所合成出系列的化合物,可以得知含有thaizole化合物的結晶度明顯的比imidzole[1,2-a]- pyrimidine化合物好。其中含anthracene與thaizole之化合物DH(SN)2Ant並製成有機場效電晶體元件,化合物經由蒸鍍,沈積於表面經過OTS (octadecyltrichlorosilane)處理之Si基板後,在室溫下可測得電洞移動速率為1.8×10-3 cm2V-1s-1;將基板溫度加熱至60 ℃時,則電洞移動速率將會下降至2.8×10-4 cm2V-1s-1。我們並利用原子力顯微鏡所觀測的影像來瞭解薄膜形態與電洞移動速率之間的關聯。 We strategically design molecules with both electron-rich and electron-deficient aromatic segments because the favorable electronic interaction between them is expected to facilitate π—π interaction and lead to better carrier transport. The electron-rich moieties used include thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-a]thiophene, and anthracene, while imidzole[1,2-a]pyrimidine, and thaizole are used as the electron-deficient moieties. Power X-ray diffraction studies on the series of compounds synthesized indicate that thiazole-containing compounds exhibit better crystallinity than imidzole[1,2-a]- pyrimidine-containing compounds. One of the compound composed of anthracene and thaizole, DH(SN)2Ant, was fabricated into OFET device via vacuum deposition on the SiO2 substrate which was pre-treated with OTS (octadecyltrichlorosilane). The hole mobility measured in was calculated to be 1.8×10-3 cm2V-1s-1 for the organic film deposited at room temperature. However, the mobility decreased to 2.8×10-4 cm2V-1s-1 when temperature of the substrate was raised to 60 ℃ during deposition. Atomic force microscopy was used to analyze the deposited film in order to correlate the morphology of the film with the charge mobility.
    顯示於類別:[化學研究所] 博碩士論文

    文件中的檔案:

    檔案 大小格式瀏覽次數
    0KbUnknown1016檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋  - 隱私權政策聲明