中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/6403
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 78818/78818 (100%)
Visitors : 34713393      Online Users : 714
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6403


    Title: 可溶性有機薄膜電晶體材料四丁基雙?吩?衍生物之開發;soluble organic semicondutor materials - tetrabutylanthradithiophene derivatives
    Authors: 楊清豪;Ching-hao Yang
    Contributors: 化學研究所
    Keywords: 噻吩蒽;可溶性;有機場效電晶體;有機半導體;anthradithiophene;soluble;organic semiconductor;OTFT
    Date: 2008-07-09
    Issue Date: 2009-09-22 10:18:57 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本篇論文重點在於合成出新的可溶性有機半導體系統,將Anthradithiophene (ADT)之2,3,7,8號位置接上四個碳之直鏈,使其溶解度提升,並藉由在ADT之5,11號位置接上含乙炔基之取代基,增加其穩定度。目前已開發出5,11-Bis(phenylethynyl)-2,3,7,8-tetrabutyl- anthradithiophene (BPE-TBADT )、5,11-Bis(thiophen-2-ylethynyl)- 2,3,7,8-tetrabutylanthradithiophene (BTE-TBADT)、5,11-Bis(thieno- [3,2-b]thiophen-5-ylethynyl)-2,3,7,8-tetrabutylanthradithiophene (BTTE-TBADT)三種可溶性有機半導體,並利用溶液製程製作有機場效電晶體之元件,三種材料皆為P型有機半導體,其中BPE-TBADT的載子移動率可達1.4*10-3 cm2 V-1 s-1。 元件製作的部分,由西北大學Tobin J. Marks實驗室協助製作,由於開發出之材料無法作蒸鍍,因此元件製作尚未找到最好條件,希望未來能對其晶體結構及製程條件做進一步的探討與改進。 A new soluble organic semiconductor material system was investigated. The new system is based on 2,3,7,8-tetrabutylanthradithiophene (TBADT). Three new organic semiconductor materials: 5,11-Bis(phenylethynyl)-2,3,7,8-tetrabutyl-anthradithiophene (BPE-TBADT ), 5,11-Bis(thiophen-2-ylethynyl)- 2,3,7,8-tetrabutyl- anthradithiophene (BTE-TBADT), and 5,11-Bis(thieno- [3,2-b]thiophen- 5-ylethynyl)-2,3,7,8-tetrabutylanthradithiophene (BTTE-TBADT) were synthesized. All the materials exhibited as P-type semiconductors. BPE-TBADT shows with current mobility of 1.4*10-3 cm2 V-1 s-1, on/off ratio 5*103, and threshold voltage -8V. The device fabrications of all the three materials are currently assisted by Tobin J. Marks group at Northwestern University, where the solution process will be examined. Hopefully, better mobility and easier fabrication will be obtained in the future.
    Appears in Collections:[Graduate Institute of Chemistry] Electronic Thesis & Dissertation

    Files in This Item:

    File SizeFormat


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明