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|Title: ||陽離子、陰離子與陰陽離子共摻雜對於p型氧化錫薄膜之電性之影響研究與陽離子空缺誘導模型建立;Doping of cation, anion, and cation-anion co-doping in the p-type SnO2 thin films and the construction of the induced cation vacancy model|
|Keywords: ||p-type transparent conductive SnO2;cation doping;anion doping;induced cation vacancy;XPS;p型透明氧化錫;陽離子摻雜;陰離子摻雜;陽離子空缺誘導;XPS光電子能譜儀|
|Issue Date: ||2014-10-15 14:35:54 (UTC+8)|
;In this study, the variety of cation and anion doped p-type SnO2 were discussed. In chapter 1, according to the literatures, the cation dopants show the poor efficiency for contributing the p-type conduction. Even though the anion (N) dopants have a higher doping efficiency compared to the cation dopants, the unstable chemical properties cause N atoms difficult to retain in SnO2 phase. In chapter 2, the electrical properties of transparent Al-doped SnO2, N-doped SnO2, and AlN-doped SnO2 thin films were studied. The N-doped SnO2 and AlN-doped SnO2 thin films demonstrated the p-type conduction with proper thermal annealing. XPS analysis verified the substituted N3- ions in the O ion sites in the annealed N-doped SnO2 and AlN-doped SnO2 thin films, which is responsible for the n-to-p conduction transition of the N-doped SnO2 and AlN-doped SnO2 thin films. However, the substituted N3- ions in the p-type N-doped SnO2 thin films outgas easily and the p-to-n conduction transition would occur in the high temperature annealing. With Al doping in the AlN-doped SnO2 thin films, a significant improvement in the stability of the substituted N3- ions was observed, which is caused by the formation Sn-N-Al bond improves the stability of the substituted N3- ions in the AlN-doped SnO2 thin films.
In chapter 3, the Al-doped SnO2 thin films were used to study the source of p-type conduction by cation doping. Three findings; (1) the p-type conduction for Al-doped SnO2 only achieved with extremely high Al concentration, (2) the decreasing oxygen vacancy concentration limits the p-type conduction, (3) the crystallity of the Al-doped SnO2 at high annealing temperature is a necessary factor for the p-type conduction. The induced cation vacancy model was proposed to explain the hole source for the high cation-doped p-type SnO2, which is adopted for all the cation-doped p-type SnO2 reported in the literatures. The results showed that only trivalence-charge cation can have a higher doping efficiency for p-type SnO2.
|Appears in Collections:||[化學工程與材料工程研究所] 博碩士論文|
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