本研究利用poly(styrene-block-4-vinylpyridine)(PS-b-P4VP)嵌段共聚高分子及ferrocenemethanol(FM)小分子混成材料所形成之自組裝超分子結構製作有機高分子奈米浮閘極電晶體式記憶體元件中之電荷捕捉層，並以pentacene為有機半導體層製作於SiO2/Si基板上。因PS-b-P4VP嵌段共聚高分子以自組裝方式形成不同奈米微結構(如球狀、柱狀、層狀)，且FM小分子及嵌段共聚高分子中P4VP鏈段產生氫鍵鍵結，使小分子間彼此不聚集，易分散於特定P4VP高分子鏈段結構內。在此探討調控混成材料之不同薄膜微結構形貌對記憶體元件效能影響。此外並可藉由控制混摻小分子摻入量及嵌段共聚高分子鏈段比例使記憶體元件達最佳化表現。;Organic nano-floating gate memory devices were fabricated using self-assembly supramolecular block copolymer hybrid thin films of poly(styrene-block-4-vinylpyridine) (PS-b-P4VP) and ferrocenemethanol (FM) small molecules as charge trapping layer, and pentacene as organic semiconductor on SiO2/Si substrate. The FM small molecules selectively hydrogen bonded with pyridine moieties of PS-b-P4VP block copolymer can be well dispersed within P4VP microdomain without significant aggregation. The nanoscale thin film morphologies and memory characteristics can be fully optimized and compared depending on the loading ratio of small molecules and the segment ratio of block copolymers.
