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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/65139

    Title: 整合慣性感測元件之導波矽基光學平台研究;Optical Performance of Guided-Wave Silicon Optical Bench with Inertial Sensing Element
    Authors: 林期祥;Lin,Chi-Hsiang
    Contributors: 光電科學與工程學系
    Keywords: 導波光矽基光學平台;慣性感測模組架構;Guided-Wave Silicon Optical Bench;Guided-Wave Silicon Optical Bench with Inertial Sensing Element;SiOB
    Date: 2014-07-24
    Issue Date: 2014-10-15 14:41:40 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本論文提出整合慣性感測元件之導波光矽基光學平台架構。其設計工作原理為模組受到外部慣性力作用導致震動模塊之薄膜產生震動,而此震動將使薄膜上方之矽質量塊形成相對震動位移量。矽質量塊作用是其震動位移量改變行進於導波中之光通量,並透過矽基光學平台檢測其光通量之變化,進而解析外部慣性力。
    導波矽基光學平台封裝面射型雷射與光偵測器後,由光偵測器接收到光電流值為0.12mA,其光學耦合效率為 -9.49 dB。而震動模塊封裝之插入損耗為 -2.18 dB,與模擬的 -1.99 dB比較,有著9%的誤差。;The guided-wave silicon optical bench (GW-SiOB) with inertial sensing element is proposed in this thesis. The working principle of the module as below: the external inertial force causes the membrane of inertial sensing element with vibration, and this vibration let the mass element, which is on the membrane, with relative vibration displacement. The relative vibration displacement of mass element lets optical waveguide with variation optical flux, and the optical flux of waveguide is monitored by silicon optical bench to analyze the external inertial force.
    The polymer material is utilized to fabricate the waveguide with air trench on GW-SiOB, and the mass element of silicon based inertial sensing element is inserted into the air trench. The silicon based inertial sensing element and GW-SiOB are fabricated by semiconductor process, and the flip-chip assembly is used to assemble the silicon based inertial sensing element, vertical-cavity surface-emitting Laser (VCSEL), and photodiode (PD) on the GW-SiOB. An optical inertial sensing module achieved is through above process.
    The PD of optical inertial sensing module without inertial sensing element received the optical current of 0.12 mA and the optical coupling efficiency of the module with -9.49 dB. The assembly insertion loss of inertial sensing element is -2.18 dB, and compared to simulation result of -1.99 dB with error value in 9%.
    Appears in Collections:[光電科學研究所] 博碩士論文

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