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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/65162

    Title: 即時薄膜光學參數量測系統之開發;Development of in situ optical parameters measurement system in thin film
    Authors: 黃富榮;Huang,Fu-rong
    Contributors: 光機電工程研究所
    Keywords: 薄膜;反射率;成長率;折射率;即時量測;弦波擬合;thin film;reflectance;growth rate;refractive index;in situ monitor;curve fitting
    Date: 2014-08-11
    Issue Date: 2014-10-15 14:42:20 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本論文是在開發薄膜成長率、折射率,以及消光係數之即時量測系統。用於薄膜製程時,即時監控薄膜參數,有效提高製程品質。基於干涉原理與薄膜光學理論,以一道雷射光垂直入射薄膜,在薄膜上表面與下表面產生兩道反射光,反射光由光偵測器接受後,藉由入射光強與反射光強之比,獲得薄膜反射率曲線,再透過軟體計算出薄膜光學參數。
    ;The purpose of this paper is to measure the growth rate and optical parameters of the thin film during epitaxial growth. Measurements are based on interferometry and thin film theorem. Using a Laser Diode light source propagating into thin film, the thin film reflected light will be measured by detector. Then the signal of reflected light is transmitted to a PC via a DAQ card and particular algorithms developed to solve for the optical factors growth rate G, refractive index n and extinction coefficient k.
    We design an air layer that can change its thickness by using a piezoelectric (PZT) actuator. Another experiment, ZnO thin film is deposited on Silicon wafer by radio-frequency (RF) sputtering system. When thin film grows, the reflectance curve will be measured. Through the special equations, we can obtain the growth rate, refractive index and extinction coefficient. Besides, the curve fitting method has been proposed to fit the reflectance curve. This method aims to in situ monitor the epitaxial thin film.
    Appears in Collections:[光機電工程研究所 ] 博碩士論文

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