氫氣對二氧化碳雷射誘發化學氣相沈積法成長碳質膜之影響

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6640

Title:	氫氣對二氧化碳雷射誘發化學氣相沈積法成長碳質膜之影響
Authors:	黃式明;Xie-Ming Huang
Contributors:	光電科學研究所
Keywords:	雷射誘發化學氣相沉積法;鑽石薄膜;LCVD;Diamond films
Date:	2000-06-28
Issue Date:	2009-09-22 10:24:40 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本文是探討氫氣對成長類鑽碳膜的影響，研究中薄膜是利用雷射誘發化學氣相沉積法，以氫氣、乙烯和氬氣為反應氣體，沉積在Si（100）、P型晶片上，藉以找出最重要的沉積參數。薄膜的組成與結構是由SEM、Dektak、FTIR與Raman光譜技術來檢測之。實驗結果顯示氫含量的增加有助於薄膜形成sp3鍵結，而且抑制石墨的產生。另外，我們也在薄膜中發現了天然鑽石才有的 1332cm-1峰值。 The purpose of the research was to deposit the Diamond-like carbon films（DLC）with hydrogen .The DLC were deposited on Si（100）P－type wafer substrate by a laser induced chemical vapor deposition system with H2 and C2H4 as the source gases. The deposited films were examined by SEM、Dektak、FTIR and Raman spectroscopy to evaluate their structures and properties. From the experimental results, The effect of hydrogen flow in the films, it is believed that the hydrogen can prevent the nucleation of graphite phase, and stabilize of sp3 bonding. We also found a diamond structure on the films.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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