本論文係利用有機金屬氣相沉積技術分別成長氮化鋁鎵/氮化鎵階變與漸變異質接面結構試片，對試片做X-射線繞射，霍爾量測等基本特性量測，與製作蕭特基二極體量測金屬與試片接觸的蕭特基位障及理想因子，最後製作金屬-半導體-金屬光偵測器。量測元件暗電流、照光電流響應及光頻譜響應等特性，並使用光學傳輸矩陣計算光通過元件的反射、穿透及吸收等參數，計算元件量子效率，同時分析其特性差異成因。The Schottky type metal-semiconductor-metal (MSM) ultraviolet Photodetectors based on GaN/AlGaN heterostructure material systems are reported. The Schottky contacts were made with Au metal. The dark and illuminated current-voltage characteristics were studied.
