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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6668

    Title: N型氮化鎵MOS元件之製作與研究;The study and fabrication of n-type GaN MOS device
    Authors: 陳宏維;Hong-Wei Chen
    Contributors: 光電科學研究所
    Keywords: 氧化鎵;氮化鎵;Ga2O3;GaN
    Date: 2002-06-26
    Issue Date: 2009-09-22 10:25:22 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 論文摘要 近年來,具寬直接能隙之Ⅲ-Ⅴ族半導體如氮化鎵因具有優良之光、電特性而越來越受到重視,由於氮化鎵具備半導體材料當中鍵結最強的離子性,一般而言難以用傳統的方法進行蝕刻及氧化之製程,本篇論文主要利用光電化學(photoelectrochemistry,PEC)之技術針對N型氮化鎵表面進行氧化,並對其氧化層Ga2O3之特性進行研究,期望能製作一高品質之氧化層並達到元件製作之各項要求。第一章主要敘述研究之背景及動機,第二章中介紹以PEC方式對氮化鎵進行氧化的原理,並量測照光強度與外加偏壓大小對氧化速率的影響,而第三章中先利用X光光電子能譜(XPS)與能量散射光譜儀(EDX)對氧化層組成進行分析,確定組成後利用掃描式電子顯微鏡(SEM)、原子力顯微鏡(AFM)與穿透式電子顯微鏡(TEM)對氧化鎵表面進行觀測,此外也對氧化層進行300℃,500℃,700℃,900℃不同溫度熱處理,並對熱處理後之氧化層特性作一分析比較,第四章中實際製作MOS二極體,並量測其電壓-電流與電壓-電容特性,此外也對氧化鎵中載子的傳導機制與氧化鎵/氮化鎵界面之界面態密度作一探討,第五章則對論文內容做一結論及檢討。 GaN has attracted much attention because of its application prospects in short-wavelength optoelectronics and high power/high temperature electronics. It is well known that compound semiconductor based metal-oxide-semiconductor (MOS) device is paved with difficulties, because of distinct interface properties compare to the former semiconductor Si/SiO2/metal system.In our study, we find several shortcoming of Ga2O3 and this will make the GaN MOSFET fabrication become more difficult and affect device characteristics.
    Appears in Collections:[光電科學研究所] 博碩士論文

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