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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/66804

    Title: 電化學蝕刻輔以633nm氦氖雷射之光鈍化現象;The Light-Passivation Effect of the 633 nm He-Ne Laser in the Electrochemical Etching Process
    Authors: 張昕錡;Chang,HSIN-CHI
    Contributors: 光機電工程研究所
    Keywords: 電化學蝕刻;光鈍化;633nm氦氖雷射
    Date: 2014-11-17
    Issue Date: 2015-03-16 15:34:47 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 在1985年時科學家Uhlir正在對矽基板進行電解拋光,意外發現表面有一層黑色薄膜,此即為多孔矽。而多孔矽的形成於P型矽時需仰賴電化學方式並於陽極反應中產生電洞使氫氟酸電解液與矽表面產生化學溶解反應,若無施加電壓則氫氟酸電解液與矽晶圓並不會發生化學溶解反應。
    ;In the 1985, scientist Uhlir firstly discovered the layer with porous when he working electrolytic polishing on the surface of silicon substrate. The process of the porous surface on P-type silicon relied on the electrochemical methods such as the conformation of holes in the anode reaction and the chemical reaction between hydrofluoric acid electrolyte and the silicon surface. While the reaction between hydrofluoric acid electrolyte and the silicon surface need to apply the appropriate voltage to trigger off the electrochemical reaction.
    For the variously electrochemical properties of porous silicon, it is widely used in many fields, including the semiconductor industry, micro-electromechanical systems, solar cells, photovoltaic components and sensors…etc. Particularly, how to improve the efficiency of the etching, shorten the process time and reduce the cost of process were attended. This study focus on the experiments for P-type silicon that using the irradiation of laser power with 0.5mW, 1.0mW, 2.0mW, respectively, and the given current was 100mA for 30 minutes of etching time. The wafers with electrochemical etching were scanned on the field emission scanning electron microscope (FE-SEM) to analyze the specimens, and explain the experimental results for the activation energy equation by Arrhenius.
    Appears in Collections:[光機電工程研究所 ] 博碩士論文

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