English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65275/65275 (100%)
Visitors : 20895817      Online Users : 276
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/66822


    Title: 由熱對火電腦模擬探討多層石墨烯在碳化矽基板上的成長;Epitaxial growth of multilayer graphene on 15R-SiC by simulated annealing technique
    Authors: 洪世軒;Shih-Hsuan,Hung
    Contributors: 物理學系
    Keywords: 碳化矽;石墨烯;silicon-carbide;graphene
    Date: 2015-01-13
    Issue Date: 2015-03-16 15:41:08 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 我們可以藉由Erhart-Albe 版本的Tersoff 作用勢[41] 加上模擬退火方式在碳化矽基板上以磊晶生成石墨稀。在這篇文章裡面,我們成功的生成三層石墨烯並且用數值方式檢查了結合能,平均鍵長,石墨烯與基底的距離,多層石墨烯之間距離,平滑程度以及石墨烯生成面積(覆蓋)百分比。對於一層石墨烯,生成溫度在15R-SiC和6H-SiC 兩種不同結構中是一樣的,都是1200 K。相較於兩層石烯,15R-SiC生成溫度是1000 K,溫度略低於6H-SiC 生成兩層石墨烯之溫度。會產生這種結果是由於結構上的差異,也就是碳化矽基板的表層在能量最佳化後對應到不同結構的雙層碳原子(C-rich bilayer)所造成的結果。我們使用兩種不同的退火流程來比較三層石墨烯,透過結果分析因而採用了這篇文章所描述的方式。我們也有比對相關的實驗數值,像是石墨烯與基底的距離以及多層石墨烯之間的間距。;The epitaxial graphene is grown for the first time on 15R-SiC(0001) substrate by
    employing a critically evaluated empirical potential, namely, the Tersoff-type Erhart-
    Albe potential [41] in the simulated annealing method. The factors that affect the
    growth process were studied. Three layers of graphene were successfully grown and
    they were examined by the calculated binding energy per atom, average bond-length,
    inter-layer and graphene-substrate separation distances, roughness parameter and
    graphene area coverage. We find that the threshold temperature at which one-layer graphene emerges is 1200 K which is the same as using 6H-SiC substrate. For the emergence of two-layer graphene, the 15R-SiC substrate yields 1000 K, which is lower than that from 6H-SiC substrate. The reasons for the disparity in threshod temperature grown on 6H- and 15R-SiC substrates are investigated and interpreted in terms of their geometrical differences. For the growth of three-layer graphene, we compared two annealing processes and discussed the difficulties in applying the same simulated method. A thorough analysis leads us to the present means of grow three-layer graphene. Also, we compared with related experiments for the various distance of separation parameters between the overlaid layers of graphene and substrate surface.
    Appears in Collections:[物理研究所] 博碩士論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML376View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明