摘要 本研究是使用離子束濺鍍 ( Ion Beam Sputter Deposition)，分別濺鍍Ta及Si兩種材料。量測由離子束濺鍍出來的光學薄膜得知，只要能夠控制好製程參數，便可鍍出膜質緻密、折射率穩定、低散射損耗、低吸收耗損以及非晶態(Amorphous)的優質光學薄膜。建立在這樣條件的優質光學薄膜之後，再對膜厚分佈建立一個適用的描述及分析方法，在此我們以離子束投影在靶材上之密度分佈模式，來模擬實際離子束濺鍍膜厚分佈，而且在模擬過程中，我們將投影面源均勻地分割成有限個發射源，如此對於描述及分析膜厚分佈，有很好的結果。 Abstract We have deposited Ta2O5 and SiO2 films by ion-beam sputtering. By measuring Ta2O5 and SiO2 films, we find that thin films deposited by ion-beam sputtering have several advantages. 1. High packing density. 2. Refractive index steady. 3. Low scattering loss. 4. Low absorption loss. 5. Amorphous. Based on these advantages, we establish the method to describe and analyze thickness distribution. We use a concept that the density distribution of ion beam projecting on target to simulate actual thickness distribution. In simulation process, we divide the projecting surface source of target to many uniform emissive sources. A correct thickness distribution by using the concept has been successfully described.
