本篇論文分為兩大主題。一個是針對在真空紫外波段（Vacuum Ultraviolet，VUV），光罩抗反射層的研究；另一個是底抗反射（Bottom Anti-Reflection Coating，BARC）技術的研究。 在光罩抗反射層部分，針對真空紫外光波段，成功的設計出一個以Fabry-Perot 結構為基礎的二元式光罩（Binary Mask）抗反射層結構。抗反射層結構是由鉻（Cr）/二氧化矽（SiO2）/鉻（Cr）堆疊所組成的。藉著調整這三層膜層的厚度，在波長193nm及157nm的反射率皆能小於2%。此種光罩抗反射層結構跟傳統的光罩抗反射層二氧化鉻（Cr2O3）/鉻（Cr）最大的不同處在於：頂部的金屬鉻膜將可避免因電子束直寫所造成的電子累積效應。 底抗反射層技術的部分，此底抗反射層為雙層結構（Bilayer），是由二氧化矽（TEOS Oxide，SiO2）/氮化矽（SiN）堆疊所組成的。此兩膜層均是利用電漿輔助化學氣相沈積系統製鍍。藉著控制氮化矽的厚度，在波長157nm或是寬帶（Broadband）157nm~193nm的反射率分別可以降至1%及3%以下。 There are two major parts in this thesis. One is to establish the anti-reflection coating technique for using in vacuum ultraviolet photomask . The other is to investigate the bottom anti-reflection coating. In the development of the anti-reflection coating technique for photomask applications, we demonstrated an anti-reflection coating structure for vacuum ultraviolet binary mask , which is based on three layers Fabry-Perot structure . The anti-reflection coating structure is composed of Chrome (Cr) / Oxide (SiO2) / Chrome (Cr) stack. After adding different optimization , reflectance of less than 2% at both 193 nm and 157 nm have been achieved. At the three-layer Fabry-Perot structure, the bottom chrome layer provides suitable absorption. By controlling the thickness of the intermediate silicon oxide layer, we can tune the minimum reflection regime to the desired exposure wavelength. The top metal layer can prevent charge accumulation during e-beam writing .The difference between the Fabry-Perot structure and traditional structure Chrome Oxide (Cr2O3 ) / Chrome (Cr) is that the top metal layer can prevent charge accumulation during e-beam writing. The structures are therefore expected to have great potential as antireflective coating structure in high performance binary mask. In the development of the bottom anti-reflection coating technique , the thinfilm structure is bilayer which is composed of TEOS Oxide (SiO2) / Silicon Nitride (SiN) both are deposited by Plasma Enhanced Chemical Vapor Deposition , PECVD . By changing the thickness of thinfilms , reflectance can be reduced to less than 1% and 3% at 157nm and broadband of 193 nm to 157 nm respectively .
