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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6743


    Title: 低溫多晶矽之製作與特性分析The;study of Characteristics of Low-Temperature Polycrystalline Silicon thin film Prepared by Metal Induced Crystallization
    Authors: 林士傑;Shih-Chieh Lin
    Contributors: 光電科學研究所
    Keywords: 低溫多晶矽;鎳金屬誘發結晶;雷射輔助電漿激發式化學氣相沈積;LAPECVD;Ni-MIC;LTPS
    Date: 2003-06-30
    Issue Date: 2009-09-22 10:27:19 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 在本實驗中利用鎳(Ni)金屬誘發的方式,使沉積在二氧化矽(SiO2)/矽(Si)基板上的非晶矽(a-Si)薄膜經低溫退火產生結晶,並探討矽結晶的型態與可能的形成機制。以快速退火(Rapid Thermal Annealing;RTA)的方式預先對鎳薄膜做退火,使Ni聚集成一顆一顆的叢集,之後沉積非晶矽於其上,再經退火處理時得以使鎳擴散至非晶矽薄膜後,形成用以誘發結晶的矽化鎳(NiSi2)晶種,以期使結晶晶粒較直接鍍覆金屬在非晶矽薄膜上所得的晶粒大。實驗中發現Ni與非晶矽薄膜於550℃下退火2小時,即可使非晶矽薄膜轉變成多晶矽(poly-Si)。 此外,以雷射輔助電漿激發式化學氣相沉積系統(LAPECVD)成長非晶矽薄膜亦可有效的改善薄膜的特性,使薄膜結晶所需的熱處理時間可以明顯的縮短。我們以LAPECVD在室溫下成長非晶矽薄膜,不但可大幅降低製程的熱預算(thermal budget)外,也可以使用成本較低的玻璃基板。以低溫熱處理在短時間內使非晶矽結晶成為多晶矽,符合一般業界在低溫多晶矽製程方面,希望降低成本且增加產能的需求與期望。 In the study, the amorphous silicon (a-Si) thin film deposited on SiO2/Si substrate by Laser Assisted Plasma Enhanced Chemical Vapor Deposition(LAPECVD) was crystallized during annealing process at low temperature by Ni-induced crystallization. Ni film was turned into to Ni clusters by Rapid Thermal Annealing(RTA).After that,a-Si film was grown by LAPECVD on Ni.Finally,Ni diffused to the a-Si interface to form NiSi2 and promote Si crystallization during annealing. a-Si film could be fully crystallized by annealing at 550℃ for 2hours in N2 ambient. Besides,a-Si film grown by LAPECVD could have better quality and be crystllized more efficient than those by PECVD.By means of a-Si film grown by LAPECVD at room temperature, we can reduce thermal budget of process and use cheaper glass substrate instead of quartz.To make a-Si film fully crystallized at low temperature in a short time,we can meet the requirement and anticipation of the industry in making LTPS.
    Appears in Collections:[光電科學研究所] 博碩士論文

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