在本實驗中利用鎳(Ni)金屬誘發的方式，使沉積在二氧化矽(SiO2)/矽(Si)基板上的非晶矽(a-Si)薄膜經低溫退火產生結晶，並探討矽結晶的型態與可能的形成機制。以快速退火（Rapid Thermal Annealing；RTA）的方式預先對鎳薄膜做退火，使Ni聚集成一顆一顆的叢集，之後沉積非晶矽於其上，再經退火處理時得以使鎳擴散至非晶矽薄膜後，形成用以誘發結晶的矽化鎳(NiSi2)晶種，以期使結晶晶粒較直接鍍覆金屬在非晶矽薄膜上所得的晶粒大。實驗中發現Ni與非晶矽薄膜於550℃下退火2小時，即可使非晶矽薄膜轉變成多晶矽(poly-Si)。 此外，以雷射輔助電漿激發式化學氣相沉積系統(LAPECVD)成長非晶矽薄膜亦可有效的改善薄膜的特性，使薄膜結晶所需的熱處理時間可以明顯的縮短。我們以LAPECVD在室溫下成長非晶矽薄膜，不但可大幅降低製程的熱預算(thermal budget)外，也可以使用成本較低的玻璃基板。以低溫熱處理在短時間內使非晶矽結晶成為多晶矽，符合一般業界在低溫多晶矽製程方面，希望降低成本且增加產能的需求與期望。 In the study, the amorphous silicon (a-Si) thin film deposited on SiO2/Si substrate by Laser Assisted Plasma Enhanced Chemical Vapor Deposition(LAPECVD) was crystallized during annealing process at low temperature by Ni-induced crystallization. Ni film was turned into to Ni clusters by Rapid Thermal Annealing(RTA).After that,a-Si film was grown by LAPECVD on Ni.Finally,Ni diffused to the a-Si interface to form NiSi2 and promote Si crystallization during annealing. a-Si film could be fully crystallized by annealing at 550℃ for 2hours in N2 ambient. Besides,a-Si film grown by LAPECVD could have better quality and be crystllized more efficient than those by PECVD.By means of a-Si film grown by LAPECVD at room temperature, we can reduce thermal budget of process and use cheaper glass substrate instead of quartz.To make a-Si film fully crystallized at low temperature in a short time,we can meet the requirement and anticipation of the industry in making LTPS.
