低溫高強度晶圓鍵合研究 :一種降低熱預算的綠色科技;Low Temperature & High Strength Wafer Bonding : A Green Technology towards Lower Thermal Budget

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題名:	低溫高強度晶圓鍵合研究 :一種降低熱預算的綠色科技;Low Temperature & High Strength Wafer Bonding : A Green Technology towards Lower Thermal Budget
作者:	羅法聖;Lo,Fa-Sain
貢獻者:	機械工程學系
關鍵詞:	晶圓鍵合;熱預算;表面活化;節能減碳;wafer bonding;thermal budget;surface activation;energy saving
日期:	2015-05-04
上傳時間:	2015-07-31 00:43:49 (UTC+8)
出版者:	國立中央大學
摘要:	晶圓鍵合(Wafer Bonding)是半導體科技產業之關鍵技術，可以廣泛地應用於Silicon On Insulator、Microelectronics、MEMS、3D IC和Optoelectronics等領域。同時由於全球暖化危機，各國都在積極研發節能減碳科技，半導體屬高能源密集產業，更需為綠色環保盡一份心力。因應產業節能與低碳社會需求，本研究目標為:引進熱預算(Thermal Budget)概念作為建立綠色節能的評估標準，進而研發低溫且高強度之晶圓鍵合技術作為評估標地。首先根據熱力學定律及綠色設計原則，設計出晶圓鍵合技術的綠色節能評估指標，可計算製程之熱預算、熱預算比值、能源效率及生態效率等數值。進一步根據表面活化理論及技術，結合HF-Dip化學濕化及Nitrogen Plasma電漿活化法，發展出低溫且高強度晶圓鍵合技術(Green Wafer Bonding)。實驗結果顯示Si/Si鍵合在75 oC，Si3N4/Si3N4在200 oC退火條件，可達到最高鍵合能2500 mJ/cm2 。經熱預算(Thermal Budget)評估比較，結果發現Si/Si (RCA-HF-N2 Plasma)技術有最低的熱預算比及最高的能源效率51.6%；Si3N4/Si3N4 (RCA-HF-N2 Plasma)技術次佳，熱預算比值2，能源效率28.6%。同時經晶圓鍵合技術特性比較，顯示GWB綠色晶圓鍵合技術較傳統晶圓鍵合技術更為節能減碳。從專利分析結果，顯示MEMS、SOI及Optoelectronics為其未來主要應用。本研究最後提出將Si3N4/Si3N4 鍵合技術應用於Smart-Cut製程中，可成功製作出超薄單晶矽薄膜，突破奈米元件製作之溫度限制。本研究成果可提升半導體產業的製程效率及貢獻於節能減碳，未來將可應用於綠色能源科技領域，如熱電能量轉換器、氫儲存器及薄膜太陽電池等。;Wafer bonding is the core technology for semiconductor industry and related micro/nano devices. It has made significant innovation in recent years for its widely applications, such as silicon on insulator、high performance microelectronics、micro-electromechanical systems、3D IC and optoelectronics, etc. Today, as energy saving and carbon reduction is continuing to evolve, wafer bonding technology is needed to innovate for the green earth. Different bonding materials do not present difficulty for wafer bonding, but thermal mismatch imposes a severe limitation on the annealing temperature. The innovation needs of wafer bonding are high bonding strength、cost effective and energy saving. The aim of this study is to design a systematic evaluation index for wafer bonding technology based on thermal budget theory, and develop low temperature & high strength wafer bonding technology. The evaluation index include thermal budget ratio, energy efficiency and eco efficiency. The study also proposed an innovative wafer bonding technology, it was named “Green Wafer Bonding”, by hybrid HF-Dip and Nitrogen Plasma Activation methods. By the experiments, it can be proved green wafer bonding can provide high strength bonding in low temperature: Si/Si (2500mJ/cm2, 75oC) and Si3N4/Si3N4 (2500mJ/cm2, 200oC). By the evaluation, it showed Si/Si (RCA-HF-N2 Plasma) has the lowest thermal budget and energy efficiency is 51.6% and Si3N4/Si3N4 (RCA-HF-N2 Plasma) needs double thermal budget and energy efficiency is 28.6%. GWB technology has the best bonding quality and the highest enegy saving performace than the conventional bondig technologies. By the patent analysis, it showed the main application of wafer bonding are including MEMS, SOI and optoelectronics, etc. The study also applied GWB (Green Wafer Bonding) technology in smart-cut process and produced a nano-scaled Si film successfully. Green Wafer Bonding has many advantages, such as high bonding strength, low temperature, saving time and cost. The research can be applied for developing the energy saving semiconductor industry and new technologies, such as thermal-electricity converter, hydrogen storage and thin film solar cell, etc.
顯示於類別:	[機械工程研究所] 博碩士論文

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