在許多光學鍍膜方法中，磁控濺鍍具有低溫鍍膜的優點，最適合在塑膠基材上製鍍光學薄膜，然而因為低溫，薄膜不容易有好的光學性質。本研究結合磁控濺鍍與離子助鍍，將金屬膜的鍍膜區與以離子束轟擊形成氧化膜的氧化區分開，除了增加沉積原子的動能，還可以使濺鍍靶材維持在躍遷態，增加沉積速率，來改善反應磁控濺鍍的缺點。實驗首先針對Ta2O5與SiO2單層薄膜，進行磁控濺射與離子束氧化(Ion Beam Oxidation, IBO)製程，改變離子源電壓、電流、離子束氧分量和濺射功率等製程條件，以探討其與光學性質與沉積速率之關係，同時藉由氧離子束對壓克力基板作表面改質，增加膜層與基板的附著力。實驗結果顯示本研究方法較傳統磁控濺鍍法有較快的沉積速率與較好的光學特性，而四種製程條件必須相互配合，才能得最好的光學薄膜。並且在鍍膜前以氧離子束轟擊基板，可有效增加薄膜與基板間附著力。由這些實驗結果可知，這種結合磁控濺射和離子束氧化的鍍膜方法，可快速沉積高品質的薄膜，已成為未來低溫沉積高密度低損耗和穩定性高的光學薄膜最具潛力的方法。Magnetron sputtering is a low temperature deposition process and suitable for use with polymer substrates. However, the films deposited by magnetron sputtering did not have perfect optical properties due to the low temperature process. In this study, we combined DC magnetron sputtering and ion assistance to deposit a thin metal film and then to oxidize this film with ion bombardment to form metal oxide in separate zones of the deposition chamber. The ion assistance increased the kinetic energy of the deposited atoms on the substrate, and the separation of deposition zone and oxidation zone kept the sputtering target in the transition mode. Both modifications improved the properties of optical thin films deposited by conventional reactive magnetron sputtering. The single layer of Ta2O5 and SiO2 was deposited by magnetron sputtering and ion-beam oxidation (IBO). The effects of ion energy, ion current, oxygen gas ratio in ion beam, and sputtering power on the optical properties and deposition rate were investigated. Moreover, the PMMA surface was modified by ion irradiation to increase the adhesion of the coatings on substrate. These results showed that IBO method may be one of promising methods to deposit the optical thin films with high packing density and high resistance to the harsh environment.
